Fabrication of bismuth nanowires with a silver nanocrystal shadowmask

S. H. Choi; K. L. Wang; M. S. Leung; G. W. Stupian; N. Presser; B. A. Morgan; R. E. Robertson; M. Abraham; E. E. King; M. B. Tueling; S. W. Chung; J. R. Heath; S. L. Cho; J. B. Ketterson

doi:10.1116/1.582348

Fabrication of bismuth nanowires with a silver nanocrystal shadowmask

S. H. Choi^*, K. L. Wang, M. S. Leung, G. W. Stupian, N. Presser, B. A. Morgan, R. E. Robertson, M. Abraham, E. E. King, M. B. Tueling, S. W. Chung, J. R. Heath, S. L. Cho, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Conference article › peer-review

22 Scopus citations

Abstract

Bismuth nanowires, 50 nm wide, are fabricated by low energy electron beam lithography using Ag nanocrystals as a shadowmask and a subsequent chlorine reactive ion etching process. Temperature dependent resistance measurements show that the Bi nanowire fabricated has semiconductor properties rather than metallic properties. Semimetallic Bi, with very small effective mass and high carrier mobilities, is reported to be a good candidate to study quantum-confinement effects in one-dimensional systems and a very promising material for thermoelectric applications.

Original language	English (US)
Pages (from-to)	1326-1328
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 I
DOIs	https://doi.org/10.1116/1.582348
State	Published - Jul 2000
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: Oct 25 1999 → Oct 29 1999

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Choi, S. H., Wang, K. L., Leung, M. S., Stupian, G. W., Presser, N., Morgan, B. A., Robertson, R. E., Abraham, M., King, E. E., Tueling, M. B., Chung, S. W., Heath, J. R., Cho, S. L., & Ketterson, J. B. (2000). Fabrication of bismuth nanowires with a silver nanocrystal shadowmask. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 18(4 I), 1326-1328. https://doi.org/10.1116/1.582348

Choi, S. H. ; Wang, K. L. ; Leung, M. S. ; Stupian, G. W. ; Presser, N. ; Morgan, B. A. ; Robertson, R. E. ; Abraham, M. ; King, E. E. ; Tueling, M. B. ; Chung, S. W. ; Heath, J. R. ; Cho, S. L. ; Ketterson, J. B. / Fabrication of bismuth nanowires with a silver nanocrystal shadowmask. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2000 ; Vol. 18, No. 4 I. pp. 1326-1328.

@article{931ceae198b6457da06e68b8f1675106,

title = "Fabrication of bismuth nanowires with a silver nanocrystal shadowmask",

abstract = "Bismuth nanowires, 50 nm wide, are fabricated by low energy electron beam lithography using Ag nanocrystals as a shadowmask and a subsequent chlorine reactive ion etching process. Temperature dependent resistance measurements show that the Bi nanowire fabricated has semiconductor properties rather than metallic properties. Semimetallic Bi, with very small effective mass and high carrier mobilities, is reported to be a good candidate to study quantum-confinement effects in one-dimensional systems and a very promising material for thermoelectric applications.",

author = "Choi, {S. H.} and Wang, {K. L.} and Leung, {M. S.} and Stupian, {G. W.} and N. Presser and Morgan, {B. A.} and Robertson, {R. E.} and M. Abraham and King, {E. E.} and Tueling, {M. B.} and Chung, {S. W.} and Heath, {J. R.} and Cho, {S. L.} and Ketterson, {J. B.}",

year = "2000",

month = jul,

doi = "10.1116/1.582348",

language = "English (US)",

volume = "18",

pages = "1326--1328",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4 I",

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Choi, SH, Wang, KL, Leung, MS, Stupian, GW, Presser, N, Morgan, BA, Robertson, RE, Abraham, M, King, EE, Tueling, MB, Chung, SW, Heath, JR, Cho, SL & Ketterson, JB 2000, 'Fabrication of bismuth nanowires with a silver nanocrystal shadowmask', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 18, no. 4 I, pp. 1326-1328. https://doi.org/10.1116/1.582348

Fabrication of bismuth nanowires with a silver nanocrystal shadowmask. / Choi, S. H.; Wang, K. L.; Leung, M. S.; Stupian, G. W.; Presser, N.; Morgan, B. A.; Robertson, R. E.; Abraham, M.; King, E. E.; Tueling, M. B.; Chung, S. W.; Heath, J. R.; Cho, S. L.; Ketterson, J. B.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 18, No. 4 I, 07.2000, p. 1326-1328.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Fabrication of bismuth nanowires with a silver nanocrystal shadowmask

AU - Choi, S. H.

AU - Wang, K. L.

AU - Leung, M. S.

AU - Stupian, G. W.

AU - Presser, N.

AU - Morgan, B. A.

AU - Robertson, R. E.

AU - Abraham, M.

AU - King, E. E.

AU - Tueling, M. B.

AU - Chung, S. W.

AU - Heath, J. R.

AU - Cho, S. L.

AU - Ketterson, J. B.

PY - 2000/7

Y1 - 2000/7

N2 - Bismuth nanowires, 50 nm wide, are fabricated by low energy electron beam lithography using Ag nanocrystals as a shadowmask and a subsequent chlorine reactive ion etching process. Temperature dependent resistance measurements show that the Bi nanowire fabricated has semiconductor properties rather than metallic properties. Semimetallic Bi, with very small effective mass and high carrier mobilities, is reported to be a good candidate to study quantum-confinement effects in one-dimensional systems and a very promising material for thermoelectric applications.

AB - Bismuth nanowires, 50 nm wide, are fabricated by low energy electron beam lithography using Ag nanocrystals as a shadowmask and a subsequent chlorine reactive ion etching process. Temperature dependent resistance measurements show that the Bi nanowire fabricated has semiconductor properties rather than metallic properties. Semimetallic Bi, with very small effective mass and high carrier mobilities, is reported to be a good candidate to study quantum-confinement effects in one-dimensional systems and a very promising material for thermoelectric applications.

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T2 - 46th National Symposium of the American Vacuum Society

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