Abstract
Bismuth nanowires, 50 nm wide, are fabricated by low energy electron beam lithography using Ag nanocrystals as a shadowmask and a subsequent chlorine reactive ion etching process. Temperature dependent resistance measurements show that the Bi nanowire fabricated has semiconductor properties rather than metallic properties. Semimetallic Bi, with very small effective mass and high carrier mobilities, is reported to be a good candidate to study quantum-confinement effects in one-dimensional systems and a very promising material for thermoelectric applications.
Original language | English (US) |
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Pages (from-to) | 1326-1328 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 18 |
Issue number | 4 I |
DOIs | |
State | Published - Jul 2000 |
Event | 46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: Oct 25 1999 → Oct 29 1999 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films