Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Sanghyun Ju, Antonio Facchetti, Yi Xuan, Jun Liu, Fumiaki Ishikawa, Peide Ye, Chongwu Zhou, Tobin J. Marks*, David B. Janes

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

488 Scopus citations


The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In 2 O 3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with ∼82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

Original languageEnglish (US)
Pages (from-to)378-384
Number of pages7
JournalNature nanotechnology
Issue number6
StatePublished - Jun 2007

ASJC Scopus subject areas

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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