Fabrication of high-efficiency heterogeneous Si/III-V integration with short optical vertical interconnect access

Doris K.T. Ng, Jing Pu, Qian Wang, Kim Peng Lim, Yongqiang Wei, Yadong Wang, Yicheng Lai, Seng-Tiong Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Silicon nanophotonic platform based on a silicon-on-insulator substrate enables dense photonic integration due to transparency for light propagation and ultra-high refractive index contrast for light confinement. Here, we integrate silicon together with III-V for high-efficiency heterogeneous Silicon/III-V and short vertical optical interconnect access. The fabrication involves 3 critical processes: 1) obtaining more than 80% maximum bonded areas of Si with III-V, 2) precise alignment of III-V nano-devices on top of the passive devices and 3) vertical sidewall etch profile of Si and III-V devices. The measurement results show around 90% coupling efficiency. The realization of this heterogeneous Si/III-V integration platform will open up enormous opportunities for photonic system on silicon through integrating various devices.

Original languageEnglish (US)
Title of host publicationOptoelectronic Integrated Circuits XV
StatePublished - May 30 2013
EventOptoelectronic Integrated Circuits XV - San Francisco, CA, United States
Duration: Feb 6 2013Feb 7 2013


OtherOptoelectronic Integrated Circuits XV
Country/TerritoryUnited States
CitySan Francisco, CA


  • III-V
  • Optical waveguides
  • Photonics integration
  • Propagation losses

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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