Fabrication of low-loss silicon nanophotonic waveguide for photonic device integration

Doris K.T. Ng, Kim Peng Lim, Qian Wang, Jing Pu, Kun Tang, Yicheng Lai, Chee Wei Lee, Seng-Tiong Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution


As the basic building block for photonic device integration, silicon nanophotonic waveguide requires low-loss propagation for high-performance ultra-compact photonic device. We experimentally study SiO2 grown by two different methods (thermal oxidation and PECVD) as hard masks for Si nano-waveguides fabrication and study their effects on propagation loss. It was found that the denser and smoother quality of thermally grown SiO2 will increase the etch selectivity of Si and reduce the line-edge roughness transferred to the Si nanowaveguide sidewall, hence giving a lower loss compared to having PECVD SiO2 hard mask. With thermally grown SiO2 as hard mask, the Si nano-waveguides loss can have a loss reduction as high as 5.5 times for a 650 nm wide nanowaveguide. Using thermally grown SiO2 as hard mask will allow the Si nano-waveguide to have as low a propagation loss as direct resist mask and enable III-V semiconductor on silicon via bonding for multifunctional photonic system on chip.

Original languageEnglish (US)
Title of host publicationSilicon Photonics VIII
StatePublished - Jun 3 2013
EventSilicon Photonics VIII - San Francisco, CA, United States
Duration: Feb 4 2013Feb 6 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherSilicon Photonics VIII
CountryUnited States
CitySan Francisco, CA


  • Dielectric
  • Optical waveguides
  • Propagation losses

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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