Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography

Hua Zhang; Sung Wook Chung; Chad A. Mirkin

doi:10.1021/nl0258473

Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography

Hua Zhang, Sung Wook Chung, Chad A. Mirkin^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

174 Scopus citations

Abstract

The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12-100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiO_x/Si substrates and then using wet-chemical etching to remove the exposed gold.

Original language	English (US)
Pages (from-to)	43-45
Number of pages	3
Journal	Nano letters
Volume	3
Issue number	1
DOIs	https://doi.org/10.1021/nl0258473
State	Published - Jan 1 2003

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl0258473

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title = "Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography",

abstract = "The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12-100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold.",

author = "Hua Zhang and Chung, {Sung Wook} and Mirkin, {Chad A.}",

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N2 - The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12-100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold.

AB - The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12-100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold.

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Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography

Abstract

ASJC Scopus subject areas

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