Facile deposition processes for semiconducting molecular solids

H. E. Katz; W. Li; A. J. Lovinger; V. R. Raju; J. A. King; Y. Y. Lin; A. Dodabalapur; Z. Bao; J. Rogers

doi:10.1557/PROC-598-BB9.6

Facile deposition processes for semiconducting molecular solids

H. E. Katz, W. Li, A. J. Lovinger, V. R. Raju, J. A. King, Y. Y. Lin, A. Dodabalapur, Z. Bao, J. Rogers

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Films of end-substituted dihexyl-α-sexithiophene and -quinquethiophene were cast from solutions in aromatic solvents onto SiO₂ and polyimide dielectrics at moderately elevated temperatures and reduced pressure. X-ray diffraction showed perpendicular orientation for most samples, while electron and optical microscopy revealed considerable variations in grain sizes, spacings, and uniformity depending on deposition conditions. For favorable morphologies, thin film transistor (TFT) mobilities were as high as those typically obtained from vacuum-deposited films, in the range of 0.01-0.2 cm²/Vs, with on/off ratios >1000 in accumulation mode.

Original language	English (US)
Pages (from-to)	BB9.6.1-BB9.6.5
Journal	Materials Research Society Symposium - Proceedings
Volume	598
DOIs	https://doi.org/10.1557/PROC-598-BB9.6
State	Published - Jan 1 2000

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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abstract = "Films of end-substituted dihexyl-α-sexithiophene and -quinquethiophene were cast from solutions in aromatic solvents onto SiO2 and polyimide dielectrics at moderately elevated temperatures and reduced pressure. X-ray diffraction showed perpendicular orientation for most samples, while electron and optical microscopy revealed considerable variations in grain sizes, spacings, and uniformity depending on deposition conditions. For favorable morphologies, thin film transistor (TFT) mobilities were as high as those typically obtained from vacuum-deposited films, in the range of 0.01-0.2 cm2/Vs, with on/off ratios >1000 in accumulation mode.",

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T1 - Facile deposition processes for semiconducting molecular solids

AU - Katz, H. E.

AU - Li, W.

AU - Lovinger, A. J.

AU - Raju, V. R.

AU - King, J. A.

AU - Lin, Y. Y.

AU - Dodabalapur, A.

AU - Bao, Z.

AU - Rogers, J.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Films of end-substituted dihexyl-α-sexithiophene and -quinquethiophene were cast from solutions in aromatic solvents onto SiO2 and polyimide dielectrics at moderately elevated temperatures and reduced pressure. X-ray diffraction showed perpendicular orientation for most samples, while electron and optical microscopy revealed considerable variations in grain sizes, spacings, and uniformity depending on deposition conditions. For favorable morphologies, thin film transistor (TFT) mobilities were as high as those typically obtained from vacuum-deposited films, in the range of 0.01-0.2 cm2/Vs, with on/off ratios >1000 in accumulation mode.

AB - Films of end-substituted dihexyl-α-sexithiophene and -quinquethiophene were cast from solutions in aromatic solvents onto SiO2 and polyimide dielectrics at moderately elevated temperatures and reduced pressure. X-ray diffraction showed perpendicular orientation for most samples, while electron and optical microscopy revealed considerable variations in grain sizes, spacings, and uniformity depending on deposition conditions. For favorable morphologies, thin film transistor (TFT) mobilities were as high as those typically obtained from vacuum-deposited films, in the range of 0.01-0.2 cm2/Vs, with on/off ratios >1000 in accumulation mode.

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Facile deposition processes for semiconducting molecular solids

Abstract

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