Facile deposition processes for semiconducting molecular solids

H. E. Katz, W. Li, A. J. Lovinger, V. R. Raju, J. A. King, Y. Y. Lin, A. Dodabalapur, Z. Bao, J. Rogers

Research output: Contribution to journalArticlepeer-review

Abstract

Films of end-substituted dihexyl-α-sexithiophene and -quinquethiophene were cast from solutions in aromatic solvents onto SiO2 and polyimide dielectrics at moderately elevated temperatures and reduced pressure. X-ray diffraction showed perpendicular orientation for most samples, while electron and optical microscopy revealed considerable variations in grain sizes, spacings, and uniformity depending on deposition conditions. For favorable morphologies, thin film transistor (TFT) mobilities were as high as those typically obtained from vacuum-deposited films, in the range of 0.01-0.2 cm2/Vs, with on/off ratios >1000 in accumulation mode.

Original languageEnglish (US)
Pages (from-to)BB9.6.1-BB9.6.5
JournalMaterials Research Society Symposium - Proceedings
Volume598
DOIs
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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