FDTD simulation of semiconductor plasmonic nano-ring laser at 1550nm based on realistic semiconductor gain model

Xi Chen; Bipin Bhola; Yingyan Huang; Seng-Tiong Ho

FDTD simulation of semiconductor plasmonic nano-ring laser at 1550nm based on realistic semiconductor gain model

Xi Chen, Bipin Bhola, Yingyan Huang, Seng-Tiong Ho

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-level multi-electron FDTD model.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2010
State	Published - Dec 1 2010
Event	Conference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States Duration: May 16 2010 → May 21 2010

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2010
Country	United States
City	San Jose, CA
Period	5/16/10 → 5/21/10

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

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Cite this

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title = "FDTD simulation of semiconductor plasmonic nano-ring laser at 1550nm based on realistic semiconductor gain model",

abstract = "We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-level multi-electron FDTD model.",

author = "Xi Chen and Bipin Bhola and Yingyan Huang and Seng-Tiong Ho",

year = "2010",

month = dec,

day = "1",

language = "English (US)",

isbn = "9781557528896",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2010",

note = "Conference on Lasers and Electro-Optics, CLEO 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

}

TY - GEN

T1 - FDTD simulation of semiconductor plasmonic nano-ring laser at 1550nm based on realistic semiconductor gain model

AU - Chen, Xi

AU - Bhola, Bipin

AU - Huang, Yingyan

AU - Ho, Seng-Tiong

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-level multi-electron FDTD model.

AB - We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-level multi-electron FDTD model.

UR - http://www.scopus.com/inward/record.url?scp=84894092109&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894092109&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84894092109

SN - 9781557528896

BT - Conference on Lasers and Electro-Optics, CLEO 2010

T2 - Conference on Lasers and Electro-Optics, CLEO 2010

Y2 - 16 May 2010 through 21 May 2010

ER -