Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film

Saidur R. Bakaul*, Jaegyu Kim, Seungbum Hong, Mathew J. Cherukara, Tao Zhou, Liliana Stan, Claudy R. Serrao, Sayeef Salahuddin, Amanda K. Petford-Long, Dillon D. Fong, Martin V. Holt

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Ferroelectric domain walls in single-crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond-breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy-induced compressive strain.

Original languageEnglish (US)
Article number1907036
JournalAdvanced Materials
Volume32
Issue number4
DOIs
StatePublished - Jan 1 2020
Externally publishedYes

Keywords

  • complex oxide
  • domain walls
  • ferroelectric
  • freestanding
  • single crystal

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Bakaul, S. R., Kim, J., Hong, S., Cherukara, M. J., Zhou, T., Stan, L., Serrao, C. R., Salahuddin, S., Petford-Long, A. K., Fong, D. D., & Holt, M. V. (2020). Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film. Advanced Materials, 32(4), [1907036]. https://doi.org/10.1002/adma.201907036