The ferromagnetic properties of MnAs/Ge multilayer structures were investigated using molecular beam epitaxy. The MnAs/Ge multilayer structures were grown on semi-insulating (001) GaAs substrates at growth temperature of 580°C. The multilayer thickness of 100Å exhibited ferromagnetism upto 345 K with coercive field of 147 Oe at 300 K. The results show that formation of ferromagnetic multilayers may be applied to material design for spintronic applications.
ASJC Scopus subject areas
- Physics and Astronomy(all)