Ferromagnetic properties of MnAs/Ge multilayers grown by molecular beam epitaxy

Jaejin Lee; Yongjie Cui; Jonghyun Song; Yunki Kim; A. J. Freeman; John B Ketterson; Sunglae Cho

doi:10.1063/1.1667837

Ferromagnetic properties of MnAs/Ge multilayers grown by molecular beam epitaxy

Jaejin Lee^*, Yongjie Cui, Jonghyun Song, Yunki Kim, A. J. Freeman, John B Ketterson, Sunglae Cho

^*Corresponding author for this work

Physics and Astronomy

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Abstract

The ferromagnetic properties of MnAs/Ge multilayer structures were investigated using molecular beam epitaxy. The MnAs/Ge multilayer structures were grown on semi-insulating (001) GaAs substrates at growth temperature of 580°C. The multilayer thickness of 100Å exhibited ferromagnetism upto 345 K with coercive field of 147 Oe at 300 K. The results show that formation of ferromagnetic multilayers may be applied to material design for spintronic applications.

Original language	English (US)
Pages (from-to)	6562-6564
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1667837
State	Published - Jun 1 2004

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General Physics and Astronomy

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title = "Ferromagnetic properties of MnAs/Ge multilayers grown by molecular beam epitaxy",

abstract = "The ferromagnetic properties of MnAs/Ge multilayer structures were investigated using molecular beam epitaxy. The MnAs/Ge multilayer structures were grown on semi-insulating (001) GaAs substrates at growth temperature of 580°C. The multilayer thickness of 100{\AA} exhibited ferromagnetism upto 345 K with coercive field of 147 Oe at 300 K. The results show that formation of ferromagnetic multilayers may be applied to material design for spintronic applications.",

author = "Jaejin Lee and Yongjie Cui and Jonghyun Song and Yunki Kim and Freeman, {A. J.} and Ketterson, {John B} and Sunglae Cho",

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AU - Lee, Jaejin

AU - Cui, Yongjie

AU - Song, Jonghyun

AU - Kim, Yunki

AU - Freeman, A. J.

AU - Ketterson, John B

AU - Cho, Sunglae

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The ferromagnetic properties of MnAs/Ge multilayer structures were investigated using molecular beam epitaxy. The MnAs/Ge multilayer structures were grown on semi-insulating (001) GaAs substrates at growth temperature of 580°C. The multilayer thickness of 100Å exhibited ferromagnetism upto 345 K with coercive field of 147 Oe at 300 K. The results show that formation of ferromagnetic multilayers may be applied to material design for spintronic applications.

AB - The ferromagnetic properties of MnAs/Ge multilayer structures were investigated using molecular beam epitaxy. The MnAs/Ge multilayer structures were grown on semi-insulating (001) GaAs substrates at growth temperature of 580°C. The multilayer thickness of 100Å exhibited ferromagnetism upto 345 K with coercive field of 147 Oe at 300 K. The results show that formation of ferromagnetic multilayers may be applied to material design for spintronic applications.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 II

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Ferromagnetic properties of MnAs/Ge multilayers grown by molecular beam epitaxy

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