Ferromagnetic properties of MnAs/Ge multilayers grown by molecular beam epitaxy

Jaejin Lee*, Yongjie Cui, Jonghyun Song, Yunki Kim, A. J. Freeman, John B Ketterson, Sunglae Cho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The ferromagnetic properties of MnAs/Ge multilayer structures were investigated using molecular beam epitaxy. The MnAs/Ge multilayer structures were grown on semi-insulating (001) GaAs substrates at growth temperature of 580°C. The multilayer thickness of 100Å exhibited ferromagnetism upto 345 K with coercive field of 147 Oe at 300 K. The results show that formation of ferromagnetic multilayers may be applied to material design for spintronic applications.

Original languageEnglish (US)
Pages (from-to)6562-6564
Number of pages3
JournalJournal of Applied Physics
Issue number11 II
StatePublished - Jun 1 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Ferromagnetic properties of MnAs/Ge multilayers grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this