TY - JOUR
T1 - Ferromagnetic thin films for loss reduction in on-chip transmission lines
AU - Amiri, Pedram Khalili
AU - Rejaei, Behzad
AU - Zhuang, Yan
AU - Vroubel, Marina
AU - Burghartz, Joachim N.
N1 - Funding Information:
This work was supported by the “Stichting voor de Tech-nische Wetenschappen (STW)” of the Netherlands. The authors would like to thank their colleagues at the DIMES laboratories, in particular H. Schellevis, A. Akhnoukh, and S. Milosavljevic, for their support.
PY - 2007/6
Y1 - 2007/6
N2 - Microstrip transmission lines fabricated on standard silicon wafers are shown to benefit from the incorporation of thin ferromagnetic Ni-Fe films when compared to control devices without Ni-Fe. At 1 GHz, inductance and quality factor of the microstrip lines are enhanced by factors of 6 and 3, respectively, while the characteristic impedance of a 20 μm wide line is increased by 85%. For constant characteristic impedance, a 200 nm thick Ni-Fe film reduces attenuation from 1.6 to 0.7 dB/cm at 500 MHz.
AB - Microstrip transmission lines fabricated on standard silicon wafers are shown to benefit from the incorporation of thin ferromagnetic Ni-Fe films when compared to control devices without Ni-Fe. At 1 GHz, inductance and quality factor of the microstrip lines are enhanced by factors of 6 and 3, respectively, while the characteristic impedance of a 20 μm wide line is increased by 85%. For constant characteristic impedance, a 200 nm thick Ni-Fe film reduces attenuation from 1.6 to 0.7 dB/cm at 500 MHz.
KW - Integrated circuit interconnections
KW - Magnetic microwave devices
KW - Microstrip
KW - Planar transmission lines
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U2 - 10.1109/TMAG.2007.893708
DO - 10.1109/TMAG.2007.893708
M3 - Article
AN - SCOPUS:34249049806
SN - 0018-9464
VL - 43
SP - 2630
EP - 2632
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 6
ER -