Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers

J. J. Lee; Y. Cui; J. H. Song; A. J. Freeman; J. B. Ketterson; S. L. Cho

doi:10.1063/1.1801173

Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers

J. J. Lee^*, Y. Cui, J. H. Song, A. J. Freeman, J. B. Ketterson, S. L. Cho

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Ge/MnAs multilayers are grown on (001) GaAs substrates by molecular-beam epitaxy. All samples investigated showed strong anomalous Hall effects at room temperature with p-type conductivity and temperature-dependent hysteresis loops in the magnetization. Ge/MnAs multilayers also revealed an in-plane magnetic easy axis and a vanishingly small in-plane magnetic anisotropy. These results are in sharp contrast to MnAs/GaAs digital alloys, where the reported Curie temperatures are at or below 50 K, and demonstrate the potential of germanium-based spintronic devices.

Original language	English (US)
Pages (from-to)	3169-3171
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1801173
State	Published - Oct 11 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1801173

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@article{5d21ea718c4a45f2859af2a443095ac4,

title = "Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers",

abstract = "Ge/MnAs multilayers are grown on (001) GaAs substrates by molecular-beam epitaxy. All samples investigated showed strong anomalous Hall effects at room temperature with p-type conductivity and temperature-dependent hysteresis loops in the magnetization. Ge/MnAs multilayers also revealed an in-plane magnetic easy axis and a vanishingly small in-plane magnetic anisotropy. These results are in sharp contrast to MnAs/GaAs digital alloys, where the reported Curie temperatures are at or below 50 K, and demonstrate the potential of germanium-based spintronic devices.",

author = "Lee, {J. J.} and Y. Cui and Song, {J. H.} and Freeman, {A. J.} and Ketterson, {J. B.} and Cho, {S. L.}",

note = "Funding Information: Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant, No. F49620-0 1-1-0428, DARPA Grant No. N00014-02-1-0887, and NSF Grant No. ECS-0224210; use was made of the facilities operated by the Northwestern Materials Research Center supported by the National Science Foundation.",

year = "2004",

month = oct,

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doi = "10.1063/1.1801173",

language = "English (US)",

volume = "85",

pages = "3169--3171",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers

AU - Lee, J. J.

AU - Cui, Y.

AU - Song, J. H.

AU - Freeman, A. J.

AU - Ketterson, J. B.

AU - Cho, S. L.

N1 - Funding Information: Research at Northwestern University was supported by the AFOSR Chalcopyrite MURI Grant, No. F49620-0 1-1-0428, DARPA Grant No. N00014-02-1-0887, and NSF Grant No. ECS-0224210; use was made of the facilities operated by the Northwestern Materials Research Center supported by the National Science Foundation.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - Ge/MnAs multilayers are grown on (001) GaAs substrates by molecular-beam epitaxy. All samples investigated showed strong anomalous Hall effects at room temperature with p-type conductivity and temperature-dependent hysteresis loops in the magnetization. Ge/MnAs multilayers also revealed an in-plane magnetic easy axis and a vanishingly small in-plane magnetic anisotropy. These results are in sharp contrast to MnAs/GaAs digital alloys, where the reported Curie temperatures are at or below 50 K, and demonstrate the potential of germanium-based spintronic devices.

AB - Ge/MnAs multilayers are grown on (001) GaAs substrates by molecular-beam epitaxy. All samples investigated showed strong anomalous Hall effects at room temperature with p-type conductivity and temperature-dependent hysteresis loops in the magnetization. Ge/MnAs multilayers also revealed an in-plane magnetic easy axis and a vanishingly small in-plane magnetic anisotropy. These results are in sharp contrast to MnAs/GaAs digital alloys, where the reported Curie temperatures are at or below 50 K, and demonstrate the potential of germanium-based spintronic devices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

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Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers

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