Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy

A. J. Blattner, B. W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

32 Scopus citations

Abstract

Epitaxial, single-phase In0.9Mn0.1As films were grown using metalorganic vapor phase epitaxy at temperatures as high as 520°C. Temperature- and field-dependent magnetization measurements indicated a single-phase film to be ferromagnetic with a Curie temperature of 333 K. Modeling of the magnetization data indicated that the ferromagnetic-to-paramagnetic phase transition was intermediate between first and second order.

Original languageEnglish (US)
Pages (from-to)1582-1585
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
StatePublished - Jul 2002
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: Jan 6 2002Jan 10 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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