Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy

A. J. Blattner; B. W. Wessels

doi:10.1116/1.1491991

Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy

A. J. Blattner, B. W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

Epitaxial, single-phase In_0.9Mn_0.1As films were grown using metalorganic vapor phase epitaxy at temperatures as high as 520°C. Temperature- and field-dependent magnetization measurements indicated a single-phase film to be ferromagnetic with a Curie temperature of 333 K. Modeling of the magnetization data indicated that the ferromagnetic-to-paramagnetic phase transition was intermediate between first and second order.

Original language	English (US)
Pages (from-to)	1582-1585
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1491991
State	Published - Jul 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1491991

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title = "Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy",

abstract = "Epitaxial, single-phase In0.9Mn0.1As films were grown using metalorganic vapor phase epitaxy at temperatures as high as 520°C. Temperature- and field-dependent magnetization measurements indicated a single-phase film to be ferromagnetic with a Curie temperature of 333 K. Modeling of the magnetization data indicated that the ferromagnetic-to-paramagnetic phase transition was intermediate between first and second order.",

author = "Blattner, {A. J.} and Wessels, {B. W.}",

year = "2002",

month = jul,

doi = "10.1116/1.1491991",

language = "English (US)",

volume = "20",

pages = "1582--1585",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

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T1 - Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy

AU - Blattner, A. J.

AU - Wessels, B. W.

PY - 2002/7

Y1 - 2002/7

N2 - Epitaxial, single-phase In0.9Mn0.1As films were grown using metalorganic vapor phase epitaxy at temperatures as high as 520°C. Temperature- and field-dependent magnetization measurements indicated a single-phase film to be ferromagnetic with a Curie temperature of 333 K. Modeling of the magnetization data indicated that the ferromagnetic-to-paramagnetic phase transition was intermediate between first and second order.

AB - Epitaxial, single-phase In0.9Mn0.1As films were grown using metalorganic vapor phase epitaxy at temperatures as high as 520°C. Temperature- and field-dependent magnetization measurements indicated a single-phase film to be ferromagnetic with a Curie temperature of 333 K. Modeling of the magnetization data indicated that the ferromagnetic-to-paramagnetic phase transition was intermediate between first and second order.

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DO - 10.1116/1.1491991

M3 - Conference article

AN - SCOPUS:0035982591

SN - 1071-1023

VL - 20

SP - 1582

EP - 1585

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy

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