Ferromagnetism in Mn-doped Ge

Sunglae Cho, Sungyoul Choi, Soon Cheol Hong, Yunki Kim, John B Ketterson, Bong Jun Kim, Y. C. Kim, Jung Hyun Jung

Research output: Contribution to journalArticlepeer-review

273 Scopus citations


We have successfully fabricated highly (up to 6%) Mn-doped bulk Ge single crystals. The lattice constant increases linearly with Mn concentration due to the larger Mn atomic radius compared with Ge, strongly indicating that Mn ions are being incorporated into the host Ge lattice. Alloys with lower Mn concentrations showed paramagnetism due to localized magnetic ions. Ge0.94Mn0.06 showed ferromagnetic ordering at ∼285 K, as determined from temperature-dependent magnetization and resistance measurements. The coersive field was 1260 Oe at 250 K.

Original languageEnglish (US)
Article number033303
Pages (from-to)333031-333033
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number3
StatePublished - Jul 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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