TY - GEN
T1 - Field effect in silicon nanostructure fabricated by Atomic Force Microscopy nano lithography
AU - Dehzangi, Arash
AU - Larki, Farhad
AU - Saion, E. B.
AU - Hutagalung, Sabar D.
AU - Hamidon, M. N.
AU - Hassan, Jumiah
PY - 2011
Y1 - 2011
N2 - The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one.
AB - The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM) nano lithography on Silicon on Insulator (SOI) wafer. I-V characteristic and the Drain/Source current under the lateral gate voltage investigated. The subthreshold swing measured and hysteresis effect observed for the old sample compared to new one.
KW - Atomic Force Microscopy nano lithography
KW - Field effect
KW - Local Anodic Oxidation
KW - P-type Silicon Nanowire transistor
KW - Silicon on insulator SOI
UR - http://www.scopus.com/inward/record.url?scp=83755173882&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=83755173882&partnerID=8YFLogxK
U2 - 10.1109/RSM.2011.6088302
DO - 10.1109/RSM.2011.6088302
M3 - Conference contribution
AN - SCOPUS:83755173882
SN - 9781612848464
T3 - 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
SP - 104
EP - 107
BT - 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
T2 - 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
Y2 - 28 September 2011 through 30 September 2011
ER -