Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma

M. Q. Ding; D. M. Gruen; A. R. Krauss; Orlando Auciello; T. D. Corrigan; R. P H Chang

Field emission from bias grown diamond thin films in a CH₄/N₂/H₂ plasma

M. Q. Ding^*, D. M. Gruen, A. R. Krauss, Orlando Auciello, T. D. Corrigan, R. P H Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The field emission properties from diamond films grown under substrate bias conditions in a microwave plasma CVD system were investigated, with a substrate temperature of 800 °C, microwave power of 600 W and a total pressure of 11 Torr. One group of films was grown with a substrate bias at -100 V in a gas mixture of 1% N₂, 1% to 20% CH₄ in H₂, while a second group of films was grown with a substrate bias ranging from 100 V to -150 V in a gas mixture of 1% N₂-10% CH₄-89% H₂. Field emission performance in terms of turn-on field and emission current improved considerably as CH₄ concentration and negative bias voltage increase.

Original language	English (US)
Title of host publication	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Publisher	IEEE
Number of pages	1
State	Published - Dec 1 1998
Event	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: Jul 19 1998 → Jul 24 1998

Other

Other	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
City	Asheville, NC, USA
Period	7/19/98 → 7/24/98

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

@inproceedings{774393d4ddd946cca4ac727c7c0c8364,

title = "Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma",

abstract = "The field emission properties from diamond films grown under substrate bias conditions in a microwave plasma CVD system were investigated, with a substrate temperature of 800 °C, microwave power of 600 W and a total pressure of 11 Torr. One group of films was grown with a substrate bias at -100 V in a gas mixture of 1% N2, 1% to 20% CH4 in H2, while a second group of films was grown with a substrate bias ranging from 100 V to -150 V in a gas mixture of 1% N2-10% CH4-89% H2. Field emission performance in terms of turn-on field and emission current improved considerably as CH4 concentration and negative bias voltage increase.",

author = "Ding, {M. Q.} and Gruen, {D. M.} and Krauss, {A. R.} and Orlando Auciello and Corrigan, {T. D.} and Chang, {R. P H}",

year = "1998",

month = dec,

day = "1",

language = "English (US)",

booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",

publisher = "IEEE",

note = "Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC ; Conference date: 19-07-1998 Through 24-07-1998",

}

TY - GEN

T1 - Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma

AU - Ding, M. Q.

AU - Gruen, D. M.

AU - Krauss, A. R.

AU - Auciello, Orlando

AU - Corrigan, T. D.

AU - Chang, R. P H

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The field emission properties from diamond films grown under substrate bias conditions in a microwave plasma CVD system were investigated, with a substrate temperature of 800 °C, microwave power of 600 W and a total pressure of 11 Torr. One group of films was grown with a substrate bias at -100 V in a gas mixture of 1% N2, 1% to 20% CH4 in H2, while a second group of films was grown with a substrate bias ranging from 100 V to -150 V in a gas mixture of 1% N2-10% CH4-89% H2. Field emission performance in terms of turn-on field and emission current improved considerably as CH4 concentration and negative bias voltage increase.

AB - The field emission properties from diamond films grown under substrate bias conditions in a microwave plasma CVD system were investigated, with a substrate temperature of 800 °C, microwave power of 600 W and a total pressure of 11 Torr. One group of films was grown with a substrate bias at -100 V in a gas mixture of 1% N2, 1% to 20% CH4 in H2, while a second group of films was grown with a substrate bias ranging from 100 V to -150 V in a gas mixture of 1% N2-10% CH4-89% H2. Field emission performance in terms of turn-on field and emission current improved considerably as CH4 concentration and negative bias voltage increase.

UR - http://www.scopus.com/inward/record.url?scp=0032308499&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032308499&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032308499

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

T2 - Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC

Y2 - 19 July 1998 through 24 July 1998

ER -

Field emission from bias grown diamond thin films in a CH₄/N₂/H₂ plasma

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