Abstract
Using cyclotron emission, we have performed simultaneously optical (FIR) and transport measurements, on quasi 2 DEG in GaAs heterojunctions. In low electric field conditions, the FIR spectrum showed, beside the cyclotron resonance line, supplementary lines in coincidence with the minima of ρxx (Hall plateaus). These supplementary lines are analysed in terms of non-homogeneous distribution of potential in the Quantum Hall state. The breakdown of the QHE observed in strong heating conditions, is due to the breakdown of the equality Ns = i (eB/h).
| Original language | English (US) |
|---|---|
| Pages (from-to) | 275-281 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1362 |
| Issue number | pt 1 |
| State | Published - 1991 |
| Event | Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Aachen, Ger Duration: Oct 28 1990 → Nov 2 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering