First cw operation of a Ga0.25In0.75As 0.5P0.5-InP laser on a silicon substrate

M. Razeghi*, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Brillouet, J. C. C-Fan, J. Salerno

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

108 Scopus citations

Abstract

We report the first successful room-temperature cw operations of a Ga 0.25 In0.75 As0.5 P0.5 -InP buried ridge structure laser emitting at 1.3 μm grown by two-step low-pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).

Original languageEnglish (US)
Pages (from-to)2389-2390
Number of pages2
JournalApplied Physics Letters
Volume53
Issue number24
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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