First cw operation of a Ga0.25In0.75As 0.5P0.5-InP laser on a silicon substrate

M. Razeghi; M. Defour; R. Blondeau; F. Omnes; P. Maurel; O. Acher; F. Brillouet; J. C. C-Fan; J. Salerno

doi:10.1063/1.100239

First cw operation of a Ga_0.25In_0.75As _0.5P_0.5-InP laser on a silicon substrate

M. Razeghi^*, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Brillouet, J. C. C-Fan, J. Salerno

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

111 Scopus citations

Abstract

We report the first successful room-temperature cw operations of a Ga _0.25 In_0.75 As_0.5 P_0.5 -InP buried ridge structure laser emitting at 1.3 μm grown by two-step low-pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).

Original language	English (US)
Pages (from-to)	2389-2390
Number of pages	2
Journal	Applied Physics Letters
Volume	53
Issue number	24
DOIs	https://doi.org/10.1063/1.100239
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.100239

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title = "First cw operation of a Ga0.25In0.75As 0.5P0.5-InP laser on a silicon substrate",

abstract = "We report the first successful room-temperature cw operations of a Ga 0.25 In0.75 As0.5 P0.5 -InP buried ridge structure laser emitting at 1.3 μm grown by two-step low-pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).",

author = "M. Razeghi and M. Defour and R. Blondeau and F. Omnes and P. Maurel and O. Acher and F. Brillouet and C-Fan, {J. C.} and J. Salerno",

year = "1988",

doi = "10.1063/1.100239",

language = "English (US)",

volume = "53",

pages = "2389--2390",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - First cw operation of a Ga0.25In0.75As 0.5P0.5-InP laser on a silicon substrate

AU - Razeghi, M.

AU - Defour, M.

AU - Blondeau, R.

AU - Omnes, F.

AU - Maurel, P.

AU - Acher, O.

AU - Brillouet, F.

AU - C-Fan, J. C.

AU - Salerno, J.

PY - 1988

Y1 - 1988

N2 - We report the first successful room-temperature cw operations of a Ga 0.25 In0.75 As0.5 P0.5 -InP buried ridge structure laser emitting at 1.3 μm grown by two-step low-pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).

AB - We report the first successful room-temperature cw operations of a Ga 0.25 In0.75 As0.5 P0.5 -InP buried ridge structure laser emitting at 1.3 μm grown by two-step low-pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

First cw operation of a Ga_0.25In_0.75As _0.5P_0.5-InP laser on a silicon substrate

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