First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate

M. Razeghi*, M. Defour, F. Omnes, Ph Maurel, J. Chazelas, F. Brillouet

*Corresponding author for this work

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

We report the first successful room-temperature GaInAsP-InP double-heterostructure laser emitting at 1.27 μm, grown by low-pressure metalorganic chemical vapor deposition on a Si substrate. A pulsed threshold current density of 10 kA/cm2 at room temperature with an external quantum efficiency of 10% per facet and an output power of 20 mW (for an oxide-defined stripe geometry with 12 μm stripe width and 250 μm cavity length) has been measured. The first aging test in pulse operation shows an increase of threshold current of only 7% for a cumulative time of 80 s at room temperature.

Original languageEnglish (US)
Pages (from-to)725-727
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number9
DOIs
StatePublished - Dec 1 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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