First observation of quantum Hall effect in a GaInAsP-InP heterostructure grown by metalorganic vapor deposition

M. Razeghi*, P. Maurel, F. Omnes, M. Defour, O. Acher, D. Tsui, H. P. Wei, Y. Guldner, J. P. Vieren

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We report the first observation of quantum Hall effect in a Ga 0.25In0.75As0.5P0.5 heterostructure grown by metalorganic chemical vapor deposition growth technique.

Original languageEnglish (US)
Pages (from-to)1821-1823
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number22
DOIs
StatePublished - Dec 1 1987

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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