First observation of the quantum hall effect in a Ga0.47In 0.53As-InP heterostructure with three electric subbands

M. Razeghi*, J. P. Duchemin, J. C. Portal, L. Dmowski, G. Remeni, R. J. Nicholas, A. Briggs

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Abstract

Shubnikov-de Haas and quantum Hall effects have been studied in GaInAs-InP heterojunctions grown by modified low pressure metalorganic chemical vapor deposition. In contrast to the results reported up till now on GaInAs-InP heterojunctions with nearly the same channel electron density, not one but three electric subbands, E0, E1, and E2, are occupied in zero magnetic field. Two electric subbands E0 and E 1 contribute to the quantum Hall effect. Magnetic depopulation of the higher (E1 and E2) subbands is observed in both perpendicular and tilted magnetic field orientations. This enables a demonstration of the importance of intersubband scattering in resistivity and cyclotron resonance.

Original languageEnglish (US)
Pages (from-to)712-714
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number11
DOIs
StatePublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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