Shubnikov-de Haas and quantum Hall effects have been studied in GaInAs-InP heterojunctions grown by modified low pressure metalorganic chemical vapor deposition. In contrast to the results reported up till now on GaInAs-InP heterojunctions with nearly the same channel electron density, not one but three electric subbands, E0, E1, and E2, are occupied in zero magnetic field. Two electric subbands E0 and E 1 contribute to the quantum Hall effect. Magnetic depopulation of the higher (E1 and E2) subbands is observed in both perpendicular and tilted magnetic field orientations. This enables a demonstration of the importance of intersubband scattering in resistivity and cyclotron resonance.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)