First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

M. Razeghi; P. Maurel; F. Omnés; S. Ben Armor; L. Dmowski; J. C. Portal

doi:10.1063/1.96999

First observation of the two-dimensional properties of the electron gas in Ga_0.49In_0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

M. Razeghi^*, P. Maurel, F. Omnés, S. Ben Armor, L. Dmowski, J. C. Portal

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We report the first observation of a two-dimensional electron gas from Shubnikov-de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular-dependent Shubnikov-de Haas measurements confirm two dimensionality of the system. Low-temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×10¹¹ cm^- ².

Original language	English (US)
Pages (from-to)	1267-1269
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	19
DOIs	https://doi.org/10.1063/1.96999
State	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.96999

Cite this

@article{f984a57b4628461ea36d851a47d54f5c,

title = "First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition",

abstract = "We report the first observation of a two-dimensional electron gas from Shubnikov-de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular-dependent Shubnikov-de Haas measurements confirm two dimensionality of the system. Low-temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×1011 cm- 2.",

author = "M. Razeghi and P. Maurel and F. Omn{\'e}s and Armor, {S. Ben} and L. Dmowski and Portal, {J. C.}",

year = "1986",

doi = "10.1063/1.96999",

language = "English (US)",

volume = "48",

pages = "1267--1269",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

AU - Razeghi, M.

AU - Maurel, P.

AU - Omnés, F.

AU - Armor, S. Ben

AU - Dmowski, L.

AU - Portal, J. C.

PY - 1986

Y1 - 1986

N2 - We report the first observation of a two-dimensional electron gas from Shubnikov-de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular-dependent Shubnikov-de Haas measurements confirm two dimensionality of the system. Low-temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×1011 cm- 2.

AB - We report the first observation of a two-dimensional electron gas from Shubnikov-de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular-dependent Shubnikov-de Haas measurements confirm two dimensionality of the system. Low-temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×1011 cm- 2.

UR - http://www.scopus.com/inward/record.url?scp=6144258793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6144258793&partnerID=8YFLogxK

U2 - 10.1063/1.96999

DO - 10.1063/1.96999

M3 - Article

AN - SCOPUS:6144258793

SN - 0003-6951

VL - 48

SP - 1267

EP - 1269

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

First observation of the two-dimensional properties of the electron gas in Ga_0.49In_0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this