First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

M. Razeghi*, P. Maurel, F. Omnés, S. Ben Armor, L. Dmowski, J. C. Portal

*Corresponding author for this work

Research output: Contribution to journalArticle

37 Scopus citations

Abstract

We report the first observation of a two-dimensional electron gas from Shubnikov-de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular-dependent Shubnikov-de Haas measurements confirm two dimensionality of the system. Low-temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×1011 cm- 2.

Original languageEnglish (US)
Pages (from-to)1267-1269
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number19
DOIs
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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