First observation of two-dimensional hole gas in a Ga0.47In 0.53As/InP heterojunction grown by metalorganic vapor deposition

M. Razeghi; P. Maurel; A. Tardella; L. Dmowski; D. Gauthier; J. C. Portal

doi:10.1063/1.337158

First observation of two-dimensional hole gas in a Ga_0.47In _0.53As/InP heterojunction grown by metalorganic vapor deposition

M. Razeghi^*, P. Maurel, A. Tardella, L. Dmowski, D. Gauthier, J. C. Portal

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report the observation of a two-dimensional (2D) hole gas in Ga _0.47In_0.53As/InP heterojunction grown by metalorganic chemical-vapor deposition. In a sample with a total hole density p_tot =7.6×10¹¹ cm^-2 a Hall mobility μ_H =10500 cm²/Vs was reached at 4.2 K. Angle-dependent Shubnikov-de Haas measurements as well as quantized Hall effect observations confirmed the two-dimensionality of the system. In contrast to the case of the 2D hole gas in GaAs/AlGaAs, low-temperature persistent photoconductivity was observed, significantly increasing the hole density at the interface.

Original language	English (US)
Pages (from-to)	2453-2456
Number of pages	4
Journal	Journal of Applied Physics
Volume	60
Issue number	7
DOIs	https://doi.org/10.1063/1.337158
State	Published - 1986

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.337158

Cite this

@article{5452da3c44c14d46b33d9c737b4b16d6,

title = "First observation of two-dimensional hole gas in a Ga0.47In 0.53As/InP heterojunction grown by metalorganic vapor deposition",

abstract = "We report the observation of a two-dimensional (2D) hole gas in Ga 0.47In0.53As/InP heterojunction grown by metalorganic chemical-vapor deposition. In a sample with a total hole density ptot =7.6×1011 cm-2 a Hall mobility μH =10500 cm2/Vs was reached at 4.2 K. Angle-dependent Shubnikov-de Haas measurements as well as quantized Hall effect observations confirmed the two-dimensionality of the system. In contrast to the case of the 2D hole gas in GaAs/AlGaAs, low-temperature persistent photoconductivity was observed, significantly increasing the hole density at the interface.",

author = "M. Razeghi and P. Maurel and A. Tardella and L. Dmowski and D. Gauthier and Portal, {J. C.}",

year = "1986",

doi = "10.1063/1.337158",

language = "English (US)",

volume = "60",

pages = "2453--2456",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - First observation of two-dimensional hole gas in a Ga0.47In 0.53As/InP heterojunction grown by metalorganic vapor deposition

AU - Razeghi, M.

AU - Maurel, P.

AU - Tardella, A.

AU - Dmowski, L.

AU - Gauthier, D.

AU - Portal, J. C.

PY - 1986

Y1 - 1986

N2 - We report the observation of a two-dimensional (2D) hole gas in Ga 0.47In0.53As/InP heterojunction grown by metalorganic chemical-vapor deposition. In a sample with a total hole density ptot =7.6×1011 cm-2 a Hall mobility μH =10500 cm2/Vs was reached at 4.2 K. Angle-dependent Shubnikov-de Haas measurements as well as quantized Hall effect observations confirmed the two-dimensionality of the system. In contrast to the case of the 2D hole gas in GaAs/AlGaAs, low-temperature persistent photoconductivity was observed, significantly increasing the hole density at the interface.

AB - We report the observation of a two-dimensional (2D) hole gas in Ga 0.47In0.53As/InP heterojunction grown by metalorganic chemical-vapor deposition. In a sample with a total hole density ptot =7.6×1011 cm-2 a Hall mobility μH =10500 cm2/Vs was reached at 4.2 K. Angle-dependent Shubnikov-de Haas measurements as well as quantized Hall effect observations confirmed the two-dimensionality of the system. In contrast to the case of the 2D hole gas in GaAs/AlGaAs, low-temperature persistent photoconductivity was observed, significantly increasing the hole density at the interface.

UR - http://www.scopus.com/inward/record.url?scp=36549094529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549094529&partnerID=8YFLogxK

U2 - 10.1063/1.337158

DO - 10.1063/1.337158

M3 - Article

AN - SCOPUS:36549094529

SN - 0021-8979

VL - 60

SP - 2453

EP - 2456

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

First observation of two-dimensional hole gas in a Ga_0.47In _0.53As/InP heterojunction grown by metalorganic vapor deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this