First observation of two-dimensional hole gas in a Ga0.47In 0.53As/InP heterojunction grown by metalorganic vapor deposition

M. Razeghi*, P. Maurel, A. Tardella, L. Dmowski, D. Gauthier, J. C. Portal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We report the observation of a two-dimensional (2D) hole gas in Ga 0.47In0.53As/InP heterojunction grown by metalorganic chemical-vapor deposition. In a sample with a total hole density ptot =7.6×1011 cm-2 a Hall mobility μH =10500 cm2/Vs was reached at 4.2 K. Angle-dependent Shubnikov-de Haas measurements as well as quantized Hall effect observations confirmed the two-dimensionality of the system. In contrast to the case of the 2D hole gas in GaAs/AlGaAs, low-temperature persistent photoconductivity was observed, significantly increasing the hole density at the interface.

Original languageEnglish (US)
Pages (from-to)2453-2456
Number of pages4
JournalJournal of Applied Physics
Issue number7
StatePublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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