Abstract
We report the prediction of impurity diffusion coefficients entirely from first principles, using density-functional theory (DFT) calculations. From DFT we obtain all microscopic parameters in the pre-factor and activation energy of impurity diffusion coefficients: (i) the correlation factor through a five frequency model, (ii) the impurity jump frequency within the framework of transition state theory and (iii) the free energies of vacancy formation and vacancy-solute binding. Specifically, we calculate the impurity diffusion coefficients of Mg, Si and Cu in dilute face-centered cubic Al alloys. The results show excellent agreement with experimental data. We discuss the factors contributing to the trends in diffusivities of these impurities.
Original language | English (US) |
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Pages (from-to) | 4102-4108 |
Number of pages | 7 |
Journal | Acta Materialia |
Volume | 57 |
Issue number | 14 |
DOIs | |
State | Published - Aug 2009 |
Keywords
- Activation energy and diffusion pre-factor
- Density-functional theory
- Dilute aluminum alloys
- Tracer diffusion of Mg, Si, Cu
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys