First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate

M. Razeghi*, R. Blondeau, M. Defour, F. Omnes, P. Maurel, F. Brillouet

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode, emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.

Original languageEnglish (US)
Pages (from-to)854-855
Number of pages2
JournalApplied Physics Letters
Volume53
Issue number10
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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