First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate

M. Razeghi; R. Blondeau; M. Defour; F. Omnes; P. Maurel; F. Brillouet

doi:10.1063/1.100093

First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate

M. Razeghi^*, R. Blondeau, M. Defour, F. Omnes, P. Maurel, F. Brillouet

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode, emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.

Original language	English (US)
Pages (from-to)	854-855
Number of pages	2
Journal	Applied Physics Letters
Volume	53
Issue number	10
DOIs	https://doi.org/10.1063/1.100093
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.100093

Cite this

@article{f803664050a24374a236dc2266e9c239,

title = "First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate",

abstract = "We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode, emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.",

author = "M. Razeghi and R. Blondeau and M. Defour and F. Omnes and P. Maurel and F. Brillouet",

year = "1988",

doi = "10.1063/1.100093",

language = "English (US)",

volume = "53",

pages = "854--855",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate

AU - Razeghi, M.

AU - Blondeau, R.

AU - Defour, M.

AU - Omnes, F.

AU - Maurel, P.

AU - Brillouet, F.

PY - 1988

Y1 - 1988

N2 - We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode, emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.

AB - We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode, emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.

UR - http://www.scopus.com/inward/record.url?scp=36549097136&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549097136&partnerID=8YFLogxK

U2 - 10.1063/1.100093

DO - 10.1063/1.100093

M3 - Article

AN - SCOPUS:36549097136

SN - 0003-6951

VL - 53

SP - 854

EP - 855

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this