Flexible gigahertz transistors derived from solution-based single-layer graphene

Cédric Sire, Florence Ardiaca, Sylvie Lepilliet, Jung Woo T. Seo, Mark C. Hersam, Gilles Dambrine, Henri Happy, Vincent Derycke*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

136 Scopus citations


Flexible electronics mostly relies on organic semiconductors but the limited carrier velocity in polymers and molecular films prevents their use at frequencies above a few megahertz. Conversely, the high potential of graphene for high-frequency electronics on rigid substrates was recently demonstrated. We conducted the first study of solution-based graphene transistors at gigahertz frequencies, and we show that solution-based single-layer graphene ideally combines the required properties to achieve high speed flexible electronics on plastic substrates. Our graphene flexible transistors have current gain cutoff frequencies of 2.2 GHz and power gain cutoff frequencies of 550 MHz. Radio frequency measurements directly performed on bent samples show remarkable mechanical stability of these devices and demonstrate the advantages of solution-based graphene field-effect transistors over other types of flexible transistors based on organic materials.

Original languageEnglish (US)
Pages (from-to)1184-1188
Number of pages5
JournalNano letters
Issue number3
StatePublished - Mar 14 2012


  • Graphene
  • flexible electronics
  • high-frequency
  • single-layer
  • solution-based
  • transistor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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