Abstract
A high quality In2O3 semiconducting channel and a CPB gate dielectric on Melinex PET (polyethylene terepthalate) substrates, transparent and flexible inorganic-organic hybrid TFTs (thin film transistors) were achieved at near room temperature by scalable fabrication process. The thin films were deposited at room temperature by ion-assisted deposition (IAD), a scalable process combining two active ion beams to manipulate film growth, oxidation and crystallization. The microstructures and surface morphologies of the In2O3 channel layers were characterized by X-ray diffraction and atomic force microscopy. The secondary ion mass spectroscopy results show that the TFTs have abrupt channel, dielectric gate interfaces and minimal interfacial cross-diffusion.
Original language | English (US) |
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Pages (from-to) | 3252-3256 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 19 |
Issue number | 20 |
DOIs | |
State | Published - Oct 19 2007 |
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering