Flexible inorganic/organic hybrid thin-film transistors using all-transparent component materials

Lian Wang*, Myung Han Yoon, Antonio Facchetti, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

77 Scopus citations


A high quality In2O3 semiconducting channel and a CPB gate dielectric on Melinex PET (polyethylene terepthalate) substrates, transparent and flexible inorganic-organic hybrid TFTs (thin film transistors) were achieved at near room temperature by scalable fabrication process. The thin films were deposited at room temperature by ion-assisted deposition (IAD), a scalable process combining two active ion beams to manipulate film growth, oxidation and crystallization. The microstructures and surface morphologies of the In2O3 channel layers were characterized by X-ray diffraction and atomic force microscopy. The secondary ion mass spectroscopy results show that the TFTs have abrupt channel, dielectric gate interfaces and minimal interfacial cross-diffusion.

Original languageEnglish (US)
Pages (from-to)3252-3256
Number of pages5
JournalAdvanced Materials
Issue number20
StatePublished - Oct 19 2007

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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