Flexible inorganic/organic hybrid thin-film transistors using all-transparent component materials

A high quality In₂O₃ semiconducting channel and a CPB gate dielectric on Melinex PET (polyethylene terepthalate) substrates, transparent and flexible inorganic-organic hybrid TFTs (thin film transistors) were achieved at near room temperature by scalable fabrication process. The thin films were deposited at room temperature by ion-assisted deposition (IAD), a scalable process combining two active ion beams to manipulate film growth, oxidation and crystallization. The microstructures and surface morphologies of the In₂O₃ channel layers were characterized by X-ray diffraction and atomic force microscopy. The secondary ion mass spectroscopy results show that the TFTs have abrupt channel, dielectric gate interfaces and minimal interfacial cross-diffusion.