Flicker noise properties of organic thin-film transistors

S. Martin*, A. Dodabalapur, Z. Bao, B. Crone, H. E. Katz, W. Li, A. Passner, J. A. Rogers

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

66 Scopus citations


The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz-10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal-oxide-semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator.

Original languageEnglish (US)
Pages (from-to)3381-3385
Number of pages5
JournalJournal of Applied Physics
Issue number7
StatePublished - Apr 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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