The article describes the development of an epitaxial deposition technique that gives every indication of being able to deposit thin films of semiconductor materials with atomic dimensional control that is not economically practical with molecular beam epitaxy or organometallic vapor phase epitaxy. The flow modulation vapor phase epitaxy process is based on conventional hydride vapor phase epitaxial technology which is widely used in the fabrication of optoelectronic devices.
|Original language||English (US)|
|Journal||Research and Development (Barrington, Illinois)|
|State||Published - Nov 1 1986|
ASJC Scopus subject areas
- Industrial and Manufacturing Engineering