FLOW MODULATION OPENS NEW DOORS FOR VPE.

Bruce W Wessels*, P. J. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The article describes the development of an epitaxial deposition technique that gives every indication of being able to deposit thin films of semiconductor materials with atomic dimensional control that is not economically practical with molecular beam epitaxy or organometallic vapor phase epitaxy. The flow modulation vapor phase epitaxy process is based on conventional hydride vapor phase epitaxial technology which is widely used in the fabrication of optoelectronic devices.

Original languageEnglish (US)
JournalResearch and Development (Barrington, Illinois)
Volume28
Issue number11
StatePublished - Nov 1 1986

ASJC Scopus subject areas

  • General
  • Industrial and Manufacturing Engineering

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