Fluorine-enhanced plasma growth of native layers on silicon

R. P H Chang*, C. C. Chang, S. Darack

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


Fluorine-enhanced low-temperature (≤600°C) plasma growth of oxides and nitrides from Si has been studied. It is shown that the growth rates are greatly increased by incorporation of less than 1/2 atomic percent fluorine into the films. Auger profiles of fluorine-enhanced-plasma-grown SiO2 films show that they are nearly indistinguishable from those grown thermally. Uniform silicon oxynitride films (with N/O concentration ratios near 2) of thicknesses over 1000 Å can be grown in about four hours.

Original languageEnglish (US)
Pages (from-to)999-1002
Number of pages4
JournalApplied Physics Letters
Issue number12
StatePublished - Dec 1 1980

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Fluorine-enhanced plasma growth of native layers on silicon'. Together they form a unique fingerprint.

Cite this