Fluorine-enhanced plasma growth of native layers on silicon

R. P H Chang; C. C. Chang; S. Darack

doi:10.1063/1.91657

Fluorine-enhanced plasma growth of native layers on silicon

R. P H Chang^*, C. C. Chang, S. Darack

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Fluorine-enhanced low-temperature (≤600°C) plasma growth of oxides and nitrides from Si has been studied. It is shown that the growth rates are greatly increased by incorporation of less than 1/2 atomic percent fluorine into the films. Auger profiles of fluorine-enhanced-plasma-grown SiO₂ films show that they are nearly indistinguishable from those grown thermally. Uniform silicon oxynitride films (with N/O concentration ratios near 2) of thicknesses over 1000 Å can be grown in about four hours.

Original language	English (US)
Pages (from-to)	999-1002
Number of pages	4
Journal	Applied Physics Letters
Volume	36
Issue number	12
DOIs	https://doi.org/10.1063/1.91657
State	Published - 1980

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Fluorine-enhanced plasma growth of native layers on silicon",

abstract = "Fluorine-enhanced low-temperature (≤600°C) plasma growth of oxides and nitrides from Si has been studied. It is shown that the growth rates are greatly increased by incorporation of less than 1/2 atomic percent fluorine into the films. Auger profiles of fluorine-enhanced-plasma-grown SiO2 films show that they are nearly indistinguishable from those grown thermally. Uniform silicon oxynitride films (with N/O concentration ratios near 2) of thicknesses over 1000 {\AA} can be grown in about four hours.",

author = "Chang, {R. P H} and Chang, {C. C.} and S. Darack",

year = "1980",

doi = "10.1063/1.91657",

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pages = "999--1002",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Fluorine-enhanced plasma growth of native layers on silicon

AU - Chang, R. P H

AU - Chang, C. C.

AU - Darack, S.

PY - 1980

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N2 - Fluorine-enhanced low-temperature (≤600°C) plasma growth of oxides and nitrides from Si has been studied. It is shown that the growth rates are greatly increased by incorporation of less than 1/2 atomic percent fluorine into the films. Auger profiles of fluorine-enhanced-plasma-grown SiO2 films show that they are nearly indistinguishable from those grown thermally. Uniform silicon oxynitride films (with N/O concentration ratios near 2) of thicknesses over 1000 Å can be grown in about four hours.

AB - Fluorine-enhanced low-temperature (≤600°C) plasma growth of oxides and nitrides from Si has been studied. It is shown that the growth rates are greatly increased by incorporation of less than 1/2 atomic percent fluorine into the films. Auger profiles of fluorine-enhanced-plasma-grown SiO2 films show that they are nearly indistinguishable from those grown thermally. Uniform silicon oxynitride films (with N/O concentration ratios near 2) of thicknesses over 1000 Å can be grown in about four hours.

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Fluorine-enhanced plasma growth of native layers on silicon

Abstract

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