Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance

Seonpil Jang; Bongjun Kim; Michael L. Geier; Pradyumna L. Prabhumirashi; Mark C. Hersam; Ananth Dodabalapur

doi:10.1063/1.4895069

Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance

Seonpil Jang^*, Bongjun Kim, Michael L. Geier, Pradyumna L. Prabhumirashi, Mark C. Hersam, Ananth Dodabalapur

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The observed improvements include: (i) A reduction in off-current by about an order of magnitude, (ii) a significant reduction in the variation of threshold voltage, and (iii) a reduction in bias stress-related instability and hysteresis present in device characteristics. These favorable changes in device characteristics also enhance circuit performance and the oscillation amplitude, oscillation frequency, and increase the yield of printed complementary 5-stage ring oscillators. The origins of these improvements are explored by exposing SWCNT FETs to a number of vapor phase polar molecules which produce similar effects on the FET characteristics as the PVDF-TrFE. Coating of the active SWCNT semiconductor layer with a fluoropolymer will be advantageous for the adoption of SWCNT FETs in a variety of printed electronics applications.

Original language	English (US)
Article number	122107
Journal	Applied Physics Letters
Volume	105
Issue number	12
DOIs	https://doi.org/10.1063/1.4895069
State	Published - Sep 22 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance",

abstract = "We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The observed improvements include: (i) A reduction in off-current by about an order of magnitude, (ii) a significant reduction in the variation of threshold voltage, and (iii) a reduction in bias stress-related instability and hysteresis present in device characteristics. These favorable changes in device characteristics also enhance circuit performance and the oscillation amplitude, oscillation frequency, and increase the yield of printed complementary 5-stage ring oscillators. The origins of these improvements are explored by exposing SWCNT FETs to a number of vapor phase polar molecules which produce similar effects on the FET characteristics as the PVDF-TrFE. Coating of the active SWCNT semiconductor layer with a fluoropolymer will be advantageous for the adoption of SWCNT FETs in a variety of printed electronics applications.",

author = "Seonpil Jang and Bongjun Kim and Geier, {Michael L.} and Prabhumirashi, {Pradyumna L.} and Hersam, {Mark C.} and Ananth Dodabalapur",

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AU - Kim, Bongjun

AU - Geier, Michael L.

AU - Prabhumirashi, Pradyumna L.

AU - Hersam, Mark C.

AU - Dodabalapur, Ananth

PY - 2014/9/22

Y1 - 2014/9/22

N2 - We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The observed improvements include: (i) A reduction in off-current by about an order of magnitude, (ii) a significant reduction in the variation of threshold voltage, and (iii) a reduction in bias stress-related instability and hysteresis present in device characteristics. These favorable changes in device characteristics also enhance circuit performance and the oscillation amplitude, oscillation frequency, and increase the yield of printed complementary 5-stage ring oscillators. The origins of these improvements are explored by exposing SWCNT FETs to a number of vapor phase polar molecules which produce similar effects on the FET characteristics as the PVDF-TrFE. Coating of the active SWCNT semiconductor layer with a fluoropolymer will be advantageous for the adoption of SWCNT FETs in a variety of printed electronics applications.

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Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance

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