Flux synthesis, structure and physical properties of new pseudo-binary REAl3-xGex compounds

Marina A. Zhuravleva, K. Kasthuri Rangan, Melissa Lane, Paul Brazis, C. R. Kannewurf, Mercouri G. Kanatzidis

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17 Scopus citations


New compounds in the system RE-Al-Ge (RE = Tb, Gd, Ho) were prepared in molten aluminum. Large, (up to 5 mm) single crystals of new pseudo-binary phases GdAl3-xGex, (x = 0.1), TbAl3-xGex, (x = 0.3), and HoAl3-xGex, (x = 0.2) were recovered in high yield. The crystal structures were refined by single crystal X-ray diffraction techniques, and found to vary as a function of rare-earth element. Thus, GdAl3-xGex crystallizes in the Ni3Sn structure type (P63/mmc) of GdAl3. For the TbAl3-xGex the BaPb3 structure type (R-3m) is adopted, as it is for TbAl3. In the case of HoAl3-xGex, the structure type of HoAl3 is not stabilized, and the compound crystallizes in the BaPb3 structure (R-3m). Crystal data: GdAl3-xGex a = 6.3115(4) angstroms, c = 4.6052(4) angstroms, V = 158.87(2) angstroms3, P63/mmc (No. 194, Z = 2); TbAl3-xGex a = 6.1956(9) angstroms, c = 21.025(4) angstroms, V = 698.9(2) angstroms3, R-3m (No. 166, Z = 9); HoAl3-xGex a = 6.1579(10) angstroms, c = 21.062(5) angstroms, V = 691.7(2) angstroms3, R-3m (No. 166, Z = 9). Charge transport properties indicate that these materials are good metallic conductors. At low temperatures they order antiferromagnetically, whereas above approximately 50 K they are Curie-Weiss paramagnets. The temperature of maximum magnetic susceptibility (Tmax) is 5.93 K, 18.8 K, and 24.0 K for HoAl2.8Ge0.2, TbAl2.7Ge0.3, and GdAl2.9Ge0.1 respectively.

Original languageEnglish (US)
Pages (from-to)137-145
Number of pages9
JournalJournal of Alloys and Compounds
Issue number1-2
StatePublished - Mar 2 2001

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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