Focused ion-beam milling for field-ion specimen preparation: Preliminary investigations

D. J. Larson; D. T. Foord; A. K. Petford-Long; T. C. Anthony; I. M. Rozdilsky; A. Cerezo; G. W D Smith

doi:10.1016/S0304-3991(98)00058-8

Focused ion-beam milling for field-ion specimen preparation: Preliminary investigations

D. J. Larson^*, D. T. Foord, A. K. Petford-Long, T. C. Anthony, I. M. Rozdilsky, A. Cerezo, G. W D Smith

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

Focused ion-beam milling has been used to fabricate field-ion specimens from a pure metal, a metal alloy, an intermetallic alloy and a multilayer film device, Gallium ions of 30 keV energy with beam currents of 4-1000 pA were used for micromachining of the field-ion specimens and for simultaneous imaging. The final sharpening for pure metal and intermetallic specimens and the entire sharpening procedure for a metal alloy sample and a multilayer film structure containing 100 repetitions of a Cu(2nm)/Co(2nm) bilayer were accomplished using the focused ion-beam system. Atom probe analysis indicated that although the amount of gallium implantation was minimal in a Cu-15% Co alloy, significant damage occurred in Cu/Co multilayer film structures prepared by focused ion-beam milling. Focused ion-beam techniques provide an alternative to traditional electropolishing methods for field-ion specimen preparation and atom probe analysis provides quantitative information of implanted gallium and ion-induced damage in such samples.

Original language	English (US)
Pages (from-to)	147-159
Number of pages	13
Journal	Ultramicroscopy
Volume	75
Issue number	3
DOIs	https://doi.org/10.1016/S0304-3991(98)00058-8
State	Published - Dec 1 1998

Funding

The authors would like to thank Mr. T.J. Godfrey for technical assistance, Drs. M. Huang and P.J. Warren for helpful discussions and Profs. M. Yamaguchi and H. Inui of Kyoto University for provision of the PST TiAl material. The Cu/Co multilayer structures were fabricated and provided by Hewlett Packard as part of a collaborative project with the University of Oxford. This research was sponsored by the U.S. National Science Foundation under Grant No. INT-9600327 (DJL) and by The Royal Society (AKPL). The University of Cambridge acknowledges the EPSRC for funding the focused ion-beam research.

Keywords

Field-ion microscopy
Specimen preparation and handling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/S0304-3991(98)00058-8

Cite this

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title = "Focused ion-beam milling for field-ion specimen preparation: Preliminary investigations",

abstract = "Focused ion-beam milling has been used to fabricate field-ion specimens from a pure metal, a metal alloy, an intermetallic alloy and a multilayer film device, Gallium ions of 30 keV energy with beam currents of 4-1000 pA were used for micromachining of the field-ion specimens and for simultaneous imaging. The final sharpening for pure metal and intermetallic specimens and the entire sharpening procedure for a metal alloy sample and a multilayer film structure containing 100 repetitions of a Cu(2nm)/Co(2nm) bilayer were accomplished using the focused ion-beam system. Atom probe analysis indicated that although the amount of gallium implantation was minimal in a Cu-15% Co alloy, significant damage occurred in Cu/Co multilayer film structures prepared by focused ion-beam milling. Focused ion-beam techniques provide an alternative to traditional electropolishing methods for field-ion specimen preparation and atom probe analysis provides quantitative information of implanted gallium and ion-induced damage in such samples.",

keywords = "Field-ion microscopy, Specimen preparation and handling",

author = "Larson, {D. J.} and Foord, {D. T.} and Petford-Long, {A. K.} and Anthony, {T. C.} and Rozdilsky, {I. M.} and A. Cerezo and Smith, {G. W D}",

note = "Funding Information: The authors would like to thank Mr. T.J. Godfrey for technical assistance, Drs. M. Huang and P.J. Warren for helpful discussions and Profs. M. Yamaguchi and H. Inui of Kyoto University for provision of the PST TiAl material. The Cu/Co multilayer structures were fabricated and provided by Hewlett Packard as part of a collaborative project with the University of Oxford. This research was sponsored by the U.S. National Science Foundation under Grant No. INT-9600327 (DJL) and by The Royal Society (AKPL). The University of Cambridge acknowledges the EPSRC for funding the focused ion-beam research. ",

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AU - Larson, D. J.

AU - Foord, D. T.

AU - Petford-Long, A. K.

AU - Anthony, T. C.

AU - Rozdilsky, I. M.

AU - Cerezo, A.

AU - Smith, G. W D

N1 - Funding Information: The authors would like to thank Mr. T.J. Godfrey for technical assistance, Drs. M. Huang and P.J. Warren for helpful discussions and Profs. M. Yamaguchi and H. Inui of Kyoto University for provision of the PST TiAl material. The Cu/Co multilayer structures were fabricated and provided by Hewlett Packard as part of a collaborative project with the University of Oxford. This research was sponsored by the U.S. National Science Foundation under Grant No. INT-9600327 (DJL) and by The Royal Society (AKPL). The University of Cambridge acknowledges the EPSRC for funding the focused ion-beam research.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Focused ion-beam milling has been used to fabricate field-ion specimens from a pure metal, a metal alloy, an intermetallic alloy and a multilayer film device, Gallium ions of 30 keV energy with beam currents of 4-1000 pA were used for micromachining of the field-ion specimens and for simultaneous imaging. The final sharpening for pure metal and intermetallic specimens and the entire sharpening procedure for a metal alloy sample and a multilayer film structure containing 100 repetitions of a Cu(2nm)/Co(2nm) bilayer were accomplished using the focused ion-beam system. Atom probe analysis indicated that although the amount of gallium implantation was minimal in a Cu-15% Co alloy, significant damage occurred in Cu/Co multilayer film structures prepared by focused ion-beam milling. Focused ion-beam techniques provide an alternative to traditional electropolishing methods for field-ion specimen preparation and atom probe analysis provides quantitative information of implanted gallium and ion-induced damage in such samples.

AB - Focused ion-beam milling has been used to fabricate field-ion specimens from a pure metal, a metal alloy, an intermetallic alloy and a multilayer film device, Gallium ions of 30 keV energy with beam currents of 4-1000 pA were used for micromachining of the field-ion specimens and for simultaneous imaging. The final sharpening for pure metal and intermetallic specimens and the entire sharpening procedure for a metal alloy sample and a multilayer film structure containing 100 repetitions of a Cu(2nm)/Co(2nm) bilayer were accomplished using the focused ion-beam system. Atom probe analysis indicated that although the amount of gallium implantation was minimal in a Cu-15% Co alloy, significant damage occurred in Cu/Co multilayer film structures prepared by focused ion-beam milling. Focused ion-beam techniques provide an alternative to traditional electropolishing methods for field-ion specimen preparation and atom probe analysis provides quantitative information of implanted gallium and ion-induced damage in such samples.

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Focused ion-beam milling for field-ion specimen preparation: Preliminary investigations

Abstract

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Keywords

ASJC Scopus subject areas

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