Focused ion-beam milling for field-ion specimen preparation: Preliminary investigations

D. J. Larson*, D. T. Foord, A. K. Petford-Long, T. C. Anthony, I. M. Rozdilsky, A. Cerezo, G. W D Smith

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

74 Scopus citations


Focused ion-beam milling has been used to fabricate field-ion specimens from a pure metal, a metal alloy, an intermetallic alloy and a multilayer film device, Gallium ions of 30 keV energy with beam currents of 4-1000 pA were used for micromachining of the field-ion specimens and for simultaneous imaging. The final sharpening for pure metal and intermetallic specimens and the entire sharpening procedure for a metal alloy sample and a multilayer film structure containing 100 repetitions of a Cu(2nm)/Co(2nm) bilayer were accomplished using the focused ion-beam system. Atom probe analysis indicated that although the amount of gallium implantation was minimal in a Cu-15% Co alloy, significant damage occurred in Cu/Co multilayer film structures prepared by focused ion-beam milling. Focused ion-beam techniques provide an alternative to traditional electropolishing methods for field-ion specimen preparation and atom probe analysis provides quantitative information of implanted gallium and ion-induced damage in such samples.

Original languageEnglish (US)
Pages (from-to)147-159
Number of pages13
Issue number3
StatePublished - Dec 1 1998


  • Field-ion microscopy
  • Specimen preparation and handling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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