Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching

Matt Dejarld; Jae Cheol Shin; Winston Chern; Debashis Chanda; Karthik Balasundaram; John A. Rogers; Xiuling Li

doi:10.1021/nl202708d

Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching

Matt Dejarld, Jae Cheol Shin, Winston Chern, Debashis Chanda, Karthik Balasundaram, John A. Rogers, Xiuling Li^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

129 Scopus citations

Abstract

Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.

Original language	English (US)
Pages (from-to)	5259-5263
Number of pages	5
Journal	Nano letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1021/nl202708d
State	Published - Dec 14 2011

Keywords

GaAs
MacEtch
Nanowire
high aspect ratio
metal-assisted chemical etching
nanopillar

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Mechanical Engineering
Bioengineering
General Materials Science

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10.1021/nl202708d

Cite this

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title = "Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching",

abstract = "Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.",

keywords = "GaAs, MacEtch, Nanowire, high aspect ratio, metal-assisted chemical etching, nanopillar",

author = "Matt Dejarld and Shin, {Jae Cheol} and Winston Chern and Debashis Chanda and Karthik Balasundaram and Rogers, {John A.} and Xiuling Li",

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doi = "10.1021/nl202708d",

language = "English (US)",

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journal = "Nano letters",

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T1 - Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching

AU - Dejarld, Matt

AU - Shin, Jae Cheol

AU - Chern, Winston

AU - Chanda, Debashis

AU - Balasundaram, Karthik

AU - Rogers, John A.

AU - Li, Xiuling

PY - 2011/12/14

Y1 - 2011/12/14

N2 - Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.

AB - Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.

KW - GaAs

KW - MacEtch

KW - Nanowire

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KW - metal-assisted chemical etching

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Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching

Abstract

Keywords

ASJC Scopus subject areas

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