Formation of native defects in the γ-ray detector material Cs 2 Hg6S7

Jino Im*, Hosub Jin, Hao Li, John A. Peters, Zhifu Liu, Bruce W. Wessels, Mercouri G. Kanatzidis, Arthur J. Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Semiconductor γ-ray detectors have broad applications, yet finding superior detector materials is a challenge because of its contradictory requirements. Here, we investigated a large set of native defects in Cs 2 Hg6 S7 that has been suggested as a promising candidate for detector materials. Using first-principles calculations, we showed that S-vacancy and Hg Cs-antisite defect provide life-time limiting deep levels, and Cs-vacancy forms a shallow acceptor level, resulting in low resistivity. To decrease such detrimental effects, concentrations of defects and carriers were examined in various chemical environments, which reveal that carrier densities can be extremely reduced by adjusting Cs partial pressure.

Original languageEnglish (US)
Article number202103
JournalApplied Physics Letters
Volume101
Issue number20
DOIs
StatePublished - Nov 12 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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