FORMATION OF THIN TUNGSTEN FILAMENTS VIA LPCVD.

H. H. Busta*, J. B. Ketterson, A. D. Feinerman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There has been increasing interest in the formation of thin metal wires in recent years. One is to study fundamental physical effects such as localization, the other to investigate scaling effects for VLSI interconnects. Tungsten filaments with a cross section of approximately 600 Angstrom multiplied by 2000 Angstrom have been processed on the sidewall of undoped polycrystalline silicon using the selective deposition technique. The width of the filament is controlled by the thickness of the polycrystalline silicon and the thickness by the predeposition cleaning conditions. Filaments with lengths of 67. 5, 140, and 265 mu m have been processed. The filament processing techniques as well as room temperature and low temperature resistance measurements are discussed.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherMaterials Research Soc
Pages533-535
Number of pages3
ISBN (Print)0931837324
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'FORMATION OF THIN TUNGSTEN FILAMENTS VIA LPCVD.'. Together they form a unique fingerprint.

Cite this