There has been increasing interest in the formation of thin metal wires in recent years. One is to study fundamental physical effects such as localization, the other to investigate scaling effects for VLSI interconnects. Tungsten filaments with a cross section of approximately 600 Angstrom multiplied by 2000 Angstrom have been processed on the sidewall of undoped polycrystalline silicon using the selective deposition technique. The width of the filament is controlled by the thickness of the polycrystalline silicon and the thickness by the predeposition cleaning conditions. Filaments with lengths of 67. 5, 140, and 265 mu m have been processed. The filament processing techniques as well as room temperature and low temperature resistance measurements are discussed.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Publisher||Materials Research Soc|
|Number of pages||3|
|State||Published - Dec 1 1986|
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