Formation of ultrathin tungsten filaments via selective low-pressure chemical vapor deposition

H. H. Busta; A. D. Feinerman; J. B. Ketterson; G. K. Wong

doi:10.1063/1.336146

Formation of ultrathin tungsten filaments via selective low-pressure chemical vapor deposition

H. H. Busta^*, A. D. Feinerman, J. B. Ketterson, G. K. Wong

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A new technique for the formation of ultrathin tungsten filaments is described. It is based on the selective deposition of tungsten via the silicon reduction of WF₆ along the sidewall of a photolithographically defined undoped polycrystalline silicon/SiO₂ step. The width of the filament is determined by the tungsten deposition parameters and the thickness by the thickness of the polycrystalline film. Filaments with a cross section of 600×2000 Å and 67.5, 140, and 265 μm lengths have been fabricated by this method. Initial low temperature resistance measurements of nonimplanted and Si-implanted (1×10¹⁵ cm^- ², 20 keV) filaments show localization/electron-electron interaction behavior.

Original language	English (US)
Pages (from-to)	987-989
Number of pages	3
Journal	Journal of Applied Physics
Volume	58
Issue number	2
DOIs	https://doi.org/10.1063/1.336146
State	Published - 1985

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Physics and Astronomy(all)

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@article{614d2f9a62cf4d758597edf3d75d08a4,

title = "Formation of ultrathin tungsten filaments via selective low-pressure chemical vapor deposition",

abstract = "A new technique for the formation of ultrathin tungsten filaments is described. It is based on the selective deposition of tungsten via the silicon reduction of WF6 along the sidewall of a photolithographically defined undoped polycrystalline silicon/SiO2 step. The width of the filament is determined by the tungsten deposition parameters and the thickness by the thickness of the polycrystalline film. Filaments with a cross section of 600×2000 {\AA} and 67.5, 140, and 265 μm lengths have been fabricated by this method. Initial low temperature resistance measurements of nonimplanted and Si-implanted (1×1015 cm- 2, 20 keV) filaments show localization/electron-electron interaction behavior.",

author = "Busta, {H. H.} and Feinerman, {A. D.} and Ketterson, {J. B.} and Wong, {G. K.}",

year = "1985",

doi = "10.1063/1.336146",

language = "English (US)",

volume = "58",

pages = "987--989",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Formation of ultrathin tungsten filaments via selective low-pressure chemical vapor deposition

AU - Busta, H. H.

AU - Feinerman, A. D.

AU - Ketterson, J. B.

AU - Wong, G. K.

PY - 1985

Y1 - 1985

N2 - A new technique for the formation of ultrathin tungsten filaments is described. It is based on the selective deposition of tungsten via the silicon reduction of WF6 along the sidewall of a photolithographically defined undoped polycrystalline silicon/SiO2 step. The width of the filament is determined by the tungsten deposition parameters and the thickness by the thickness of the polycrystalline film. Filaments with a cross section of 600×2000 Å and 67.5, 140, and 265 μm lengths have been fabricated by this method. Initial low temperature resistance measurements of nonimplanted and Si-implanted (1×1015 cm- 2, 20 keV) filaments show localization/electron-electron interaction behavior.

AB - A new technique for the formation of ultrathin tungsten filaments is described. It is based on the selective deposition of tungsten via the silicon reduction of WF6 along the sidewall of a photolithographically defined undoped polycrystalline silicon/SiO2 step. The width of the filament is determined by the tungsten deposition parameters and the thickness by the thickness of the polycrystalline film. Filaments with a cross section of 600×2000 Å and 67.5, 140, and 265 μm lengths have been fabricated by this method. Initial low temperature resistance measurements of nonimplanted and Si-implanted (1×1015 cm- 2, 20 keV) filaments show localization/electron-electron interaction behavior.

UR - http://www.scopus.com/inward/record.url?scp=36549103033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549103033&partnerID=8YFLogxK

U2 - 10.1063/1.336146

DO - 10.1063/1.336146

M3 - Article

AN - SCOPUS:36549103033

SN - 0021-8979

VL - 58

SP - 987

EP - 989

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Formation of ultrathin tungsten filaments via selective low-pressure chemical vapor deposition

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