Formation of ultrathin tungsten filaments via selective low-pressure chemical vapor deposition

H. H. Busta*, A. D. Feinerman, John B Ketterson, G. K. Wong

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A new technique for the formation of ultrathin tungsten filaments is described. It is based on the selective deposition of tungsten via the silicon reduction of WF6 along the sidewall of a photolithographically defined undoped polycrystalline silicon/SiO2 step. The width of the filament is determined by the tungsten deposition parameters and the thickness by the thickness of the polycrystalline film. Filaments with a cross section of 600×2000 Å and 67.5, 140, and 265 μm lengths have been fabricated by this method. Initial low temperature resistance measurements of nonimplanted and Si-implanted (1×1015 cm- 2, 20 keV) filaments show localization/electron-electron interaction behavior.

Original languageEnglish (US)
Pages (from-to)987-989
Number of pages3
JournalJournal of Applied Physics
Volume58
Issue number2
DOIs
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Formation of ultrathin tungsten filaments via selective low-pressure chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this