Four-level two-electron FDTD model of lasing action in a semiconductor

Shih Hui Chang*, Hui Cao, Allen Taflove

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

A new multiphysics finite-difference time-domain (FDTD) model of the lasing dynamics of a semiconductor was reported. The model incorporates a semiconductor band structure which allows four energy levels for each of the two interacting electrons. This approach presents an advance relative to the method described which did not include the pumping dynamics, the semiconductor band structure, or the exclusion principle. The technique allows to solve for the full dynamics of lasing action in semiconductor media.

Original languageEnglish (US)
Pages (from-to)382-385
Number of pages4
JournalIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
Volume4
StatePublished - Sep 1 2003
Event2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States
Duration: Jun 22 2003Jun 27 2003

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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