Abstract
A new multiphysics finite-difference time-domain (FDTD) model of the lasing dynamics of a semiconductor was reported. The model incorporates a semiconductor band structure which allows four energy levels for each of the two interacting electrons. This approach presents an advance relative to the method described which did not include the pumping dynamics, the semiconductor band structure, or the exclusion principle. The technique allows to solve for the full dynamics of lasing action in semiconductor media.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 382-385 |
| Number of pages | 4 |
| Journal | IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) |
| Volume | 4 |
| State | Published - 2003 |
| Externally published | Yes |
| Event | 2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States Duration: Jun 22 2003 → Jun 27 2003 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering