Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth

M. Grayson; S. F. Roth; Y. Xiang; F. Fischer; D. Schuh; M. Bichler

doi:10.1063/1.2135407

Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth

M. Grayson^*, S. F. Roth, Y. Xiang, F. Fischer, D. Schuh, M. Bichler

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We demonstrate a contact design that allows four-terminal magnetotransport measurements of cleaved-edge overgrown two-dimensional electron and hole systems. By lithographically patterning and etching a bulk-doped surface layer, finger-shaped leads are fabricated, which contact the two-dimensional systems on the cleave facet. Both n - and p -type two-dimensional systems are demonstrated at the cleaved edge, using Si as either donor or acceptor, dependent on the growth conditions. Four-point measurements of both gated and modulation-doped samples yield fractional quantum Hall features for both n and p types, with several higher-order fractions evident in n -type modulation-doped samples.

Original language	English (US)
Article number	212113
Pages (from-to)	1-2
Number of pages	2
Journal	Applied Physics Letters
Volume	87
Issue number	21
DOIs	https://doi.org/10.1063/1.2135407
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth",

abstract = "We demonstrate a contact design that allows four-terminal magnetotransport measurements of cleaved-edge overgrown two-dimensional electron and hole systems. By lithographically patterning and etching a bulk-doped surface layer, finger-shaped leads are fabricated, which contact the two-dimensional systems on the cleave facet. Both n - and p -type two-dimensional systems are demonstrated at the cleaved edge, using Si as either donor or acceptor, dependent on the growth conditions. Four-point measurements of both gated and modulation-doped samples yield fractional quantum Hall features for both n and p types, with several higher-order fractions evident in n -type modulation-doped samples.",

author = "M. Grayson and Roth, {S. F.} and Y. Xiang and F. Fischer and D. Schuh and M. Bichler",

note = "Funding Information: Supported by the Deutsche Forschungsgemeinschaft via SFB 631 and Schwerpunktprogramm Quanten-Hall-Systeme, and the Bundesministerium f{\"u}r Bildung und Forschung (BmBF) through Project 01BM912. M.G. would like to thank the A. V. Humboldt Foundation for support during this work, and Gerhard Abstreiter for continued support and discussions.",

year = "2005",

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T1 - Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth

AU - Grayson, M.

AU - Roth, S. F.

AU - Xiang, Y.

AU - Fischer, F.

AU - Schuh, D.

AU - Bichler, M.

N1 - Funding Information: Supported by the Deutsche Forschungsgemeinschaft via SFB 631 and Schwerpunktprogramm Quanten-Hall-Systeme, and the Bundesministerium für Bildung und Forschung (BmBF) through Project 01BM912. M.G. would like to thank the A. V. Humboldt Foundation for support during this work, and Gerhard Abstreiter for continued support and discussions.

PY - 2005

Y1 - 2005

N2 - We demonstrate a contact design that allows four-terminal magnetotransport measurements of cleaved-edge overgrown two-dimensional electron and hole systems. By lithographically patterning and etching a bulk-doped surface layer, finger-shaped leads are fabricated, which contact the two-dimensional systems on the cleave facet. Both n - and p -type two-dimensional systems are demonstrated at the cleaved edge, using Si as either donor or acceptor, dependent on the growth conditions. Four-point measurements of both gated and modulation-doped samples yield fractional quantum Hall features for both n and p types, with several higher-order fractions evident in n -type modulation-doped samples.

AB - We demonstrate a contact design that allows four-terminal magnetotransport measurements of cleaved-edge overgrown two-dimensional electron and hole systems. By lithographically patterning and etching a bulk-doped surface layer, finger-shaped leads are fabricated, which contact the two-dimensional systems on the cleave facet. Both n - and p -type two-dimensional systems are demonstrated at the cleaved edge, using Si as either donor or acceptor, dependent on the growth conditions. Four-point measurements of both gated and modulation-doped samples yield fractional quantum Hall features for both n and p types, with several higher-order fractions evident in n -type modulation-doped samples.

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