Fractional quantum Hall effect in a high-mobility GaAs/Al xGa1-xAs multiple quantum well heterostructure

M. Shayegan*, J. K. Wang, M. Santos, T. Sajoto, B. B. Goldberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We report the realization of a high mobility [μ≅4.8×10 5 cm2/(V s)] selectively doped GaAs/AlxGa 1-xAs multiple quantum well structure with low density (ns ≅1.7×1011 cm-2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau-level filling factor ν=1/3 is Δ≅2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two-dimensional electron system in the fractional quantum Hall regime.

Original languageEnglish (US)
Pages (from-to)27-29
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number1
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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