Abstract
We report the realization of a high mobility [μ≅4.8×10 5 cm2/(V s)] selectively doped GaAs/AlxGa 1-xAs multiple quantum well structure with low density (ns ≅1.7×1011 cm-2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau-level filling factor ν=1/3 is Δ≅2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two-dimensional electron system in the fractional quantum Hall regime.
Original language | English (US) |
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Pages (from-to) | 27-29 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 54 |
Issue number | 1 |
DOIs | |
State | Published - 1989 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)