Frontiers of monolithic integration of semiconductor III-V optoelectronic devices with silicon technology

Manijeh Razeghi*, R. Sudharsanan, J. C.C. Fan

*Corresponding author for this work

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

n this paper, we review the advances made in the area of monolithic integration of III-V technology with Si technology. The major issue of heteroepitaxy of III-V films on Si substrates has advanced considerably, that many III-V devices have been fabricated on Si substrates and comparable performance was obtained on these devices. Though, many minority carrier devices on Si have been demonstrated but still, their performance is limited by dislocations. Recent demonstration of a monolithic GaAs based OEIC offers great promise for further research in this area.

Original languageEnglish (US)
Pages622-625
Number of pages4
StatePublished - Dec 1 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: Aug 26 1992Aug 28 1992

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period8/26/928/28/92

ASJC Scopus subject areas

  • Engineering(all)

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    Razeghi, M., Sudharsanan, R., & Fan, J. C. C. (1992). Frontiers of monolithic integration of semiconductor III-V optoelectronic devices with silicon technology. 622-625. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .