Here, we report on Si-based color photodetectors using monolithically integrated metal-insulator-metal Fabry-Perot cavity top contacts. Contacts were formed by depositing Ag/SiO2/Ag layers with different oxide thicknesses for each color. This allowed controlling the transmission band position and width while maintaining the high conductivity. We have obtained over 55% external quantum efficiency for different colors both numerically and experimentally. The FWHM was less than 50 nm and the rejection ratio was an order of magnitude for each color. The total transmission through these top contacts exceeded that of dye filters used in conventional color CCDs and CMOS imaging arrays. In addition, these contacts performed similarly to recently proposed plasmonic hole array filters without the necessity of complicated fabrication steps like FIB milling and e-beam lithography. This type of top contacts can serve as a cheap alternative to dye filters used in contemporary devices without making the fabrication complicated.
ASJC Scopus subject areas
- Physics and Astronomy(all)