Functionalized anthradithiophenes for organic field-effect transistors

Ming Chou Chen; Choongik Kim; Sheng Yu Chen; Yen Ju Chiang; Ming Che Chung; Antonio Facchetti; Tobin Jay Marks

doi:10.1039/b715746k

Functionalized anthradithiophenes for organic field-effect transistors

Ming Chou Chen^*, Choongik Kim, Sheng Yu Chen, Yen Ju Chiang, Ming Che Chung, Antonio Facchetti, Tobin Jay Marks

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

98 Scopus citations

Abstract

Two new semiconductors for organic thin-film transistors (OTFTs), diperfluorophenyl anthradithiophene (DFPADT) and dimethyl anthradithiophene (DMADT), have been synthesized and characterized. The first material exhibits ambipolar transport in OTFT devices with field-effect mobilities (μ) of 6 × 10^-4 cm² V^-1 s^-1 and 0.05 cm² V^-1 s^-1 for electrons and holes, respectively. Therefore, diperfluorophenyl substitution was found to be effective to induce n-type transport. Dimethyl-substituted anthradithiophene (DMADT) was also synthesized for comparison and exhibited exclusively hole transport with carrier mobility of ∼0.1 cm² V^-1 s ^-1. Within this semiconductor family, OTFT carrier mobility values are strongly dependent on the semiconductor film growth conditions, substrate deposition temperatures, and gate dielectric surface treatment.

Original language	English (US)
Pages (from-to)	1029-1036
Number of pages	8
Journal	Journal of Materials Chemistry
Volume	18
Issue number	9
DOIs	https://doi.org/10.1039/b715746k
State	Published - Feb 22 2008

ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

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title = "Functionalized anthradithiophenes for organic field-effect transistors",

abstract = "Two new semiconductors for organic thin-film transistors (OTFTs), diperfluorophenyl anthradithiophene (DFPADT) and dimethyl anthradithiophene (DMADT), have been synthesized and characterized. The first material exhibits ambipolar transport in OTFT devices with field-effect mobilities (μ) of 6 × 10-4 cm2 V-1 s-1 and 0.05 cm2 V-1 s-1 for electrons and holes, respectively. Therefore, diperfluorophenyl substitution was found to be effective to induce n-type transport. Dimethyl-substituted anthradithiophene (DMADT) was also synthesized for comparison and exhibited exclusively hole transport with carrier mobility of ∼0.1 cm2 V-1 s -1. Within this semiconductor family, OTFT carrier mobility values are strongly dependent on the semiconductor film growth conditions, substrate deposition temperatures, and gate dielectric surface treatment.",

author = "Chen, {Ming Chou} and Choongik Kim and Chen, {Sheng Yu} and Chiang, {Yen Ju} and Chung, {Ming Che} and Antonio Facchetti and Marks, {Tobin Jay}",

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T1 - Functionalized anthradithiophenes for organic field-effect transistors

AU - Chen, Ming Chou

AU - Kim, Choongik

AU - Chen, Sheng Yu

AU - Chiang, Yen Ju

AU - Chung, Ming Che

AU - Facchetti, Antonio

AU - Marks, Tobin Jay

PY - 2008/2/22

Y1 - 2008/2/22

N2 - Two new semiconductors for organic thin-film transistors (OTFTs), diperfluorophenyl anthradithiophene (DFPADT) and dimethyl anthradithiophene (DMADT), have been synthesized and characterized. The first material exhibits ambipolar transport in OTFT devices with field-effect mobilities (μ) of 6 × 10-4 cm2 V-1 s-1 and 0.05 cm2 V-1 s-1 for electrons and holes, respectively. Therefore, diperfluorophenyl substitution was found to be effective to induce n-type transport. Dimethyl-substituted anthradithiophene (DMADT) was also synthesized for comparison and exhibited exclusively hole transport with carrier mobility of ∼0.1 cm2 V-1 s -1. Within this semiconductor family, OTFT carrier mobility values are strongly dependent on the semiconductor film growth conditions, substrate deposition temperatures, and gate dielectric surface treatment.

AB - Two new semiconductors for organic thin-film transistors (OTFTs), diperfluorophenyl anthradithiophene (DFPADT) and dimethyl anthradithiophene (DMADT), have been synthesized and characterized. The first material exhibits ambipolar transport in OTFT devices with field-effect mobilities (μ) of 6 × 10-4 cm2 V-1 s-1 and 0.05 cm2 V-1 s-1 for electrons and holes, respectively. Therefore, diperfluorophenyl substitution was found to be effective to induce n-type transport. Dimethyl-substituted anthradithiophene (DMADT) was also synthesized for comparison and exhibited exclusively hole transport with carrier mobility of ∼0.1 cm2 V-1 s -1. Within this semiconductor family, OTFT carrier mobility values are strongly dependent on the semiconductor film growth conditions, substrate deposition temperatures, and gate dielectric surface treatment.

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