Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics

Vinod K. Sangwan, Rocio Ponce Ortiz, Justice M.P. Alaboson, Jonathan D. Emery, Michael J. Bedzyk, Lincoln J. Lauhon, Tobin J. Marks*, Mark C. Hersam

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

140 Scopus citations


In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm 2/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10 5), while also achieving hysteresis-free operation in ambient conditions.

Original languageEnglish (US)
Pages (from-to)7480-7488
Number of pages9
JournalACS nano
Issue number8
StatePublished - Aug 28 2012


  • density gradient ultracentrifugation
  • mobility
  • nanoelectronics
  • self-assembled nanodielectrics
  • subthreshold swing
  • transconductance

ASJC Scopus subject areas

  • General Engineering
  • General Materials Science
  • General Physics and Astronomy


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