Future trends of III-nitrides using lateral epitaxial overgrowth

Manijeh Razeghi*, P. Kung, P. Sandvik X. Zhang, K. Mi, D. Walker, V. Kumar, J. Diaz

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

In this work, we present the low-pressure metalorganic chemical vapor deposition and characterization of the lateral epitaxial overgrowth (LEO) of GaN films on both sapphire and silicon substrates. The structural, optical and electrical properties are discussed. Scanning electron microscopy, atomic force microscopy and x-ray diffraction were used to demonstrate the high quality of the LEO material. Deep level transient spectroscopy was also used to study the electrical properties of these materials. For LEO on sapphire, deep levels at 0.19, 0.30 and 0.45 eV below the conduction band were found, while for LEO on silicon, deep levels at 0.45 and 0.60 eV below the conduction were also found. The capture cross sections for these levels were 4.88e-18, 7.83e-17 and 1.5e-15 cm-2 for sapphire and 2.59e-14 and 1.35e-15 cm2 for silicon, respectively.

Original languageEnglish (US)
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3975
StatePublished - Jan 1 2000
EventIWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India
Duration: Dec 14 1999Dec 18 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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