Future trends of III-nitrides using lateral epitaxial overgrowth

Manijeh Razeghi; P. Kung; P. Sandvik X. Zhang; K. Mi; D. Walker; V. Kumar; J. Diaz

Future trends of III-nitrides using lateral epitaxial overgrowth

Manijeh Razeghi^*, P. Kung, P. Sandvik X. Zhang, K. Mi, D. Walker, V. Kumar, J. Diaz

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this work, we present the low-pressure metalorganic chemical vapor deposition and characterization of the lateral epitaxial overgrowth (LEO) of GaN films on both sapphire and silicon substrates. The structural, optical and electrical properties are discussed. Scanning electron microscopy, atomic force microscopy and x-ray diffraction were used to demonstrate the high quality of the LEO material. Deep level transient spectroscopy was also used to study the electrical properties of these materials. For LEO on sapphire, deep levels at 0.19, 0.30 and 0.45 eV below the conduction band were found, while for LEO on silicon, deep levels at 0.45 and 0.60 eV below the conduction were also found. The capture cross sections for these levels were 4.88e-18, 7.83e-17 and 1.5e-15 cm^-2 for sapphire and 2.59e-14 and 1.35e-15 cm² for silicon, respectively.

Original language	English (US)
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3975
State	Published - Jan 1 2000
Event	IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India Duration: Dec 14 1999 → Dec 18 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{cb4c6eb5abd54040b62626926cc8b038,

title = "Future trends of III-nitrides using lateral epitaxial overgrowth",

abstract = "In this work, we present the low-pressure metalorganic chemical vapor deposition and characterization of the lateral epitaxial overgrowth (LEO) of GaN films on both sapphire and silicon substrates. The structural, optical and electrical properties are discussed. Scanning electron microscopy, atomic force microscopy and x-ray diffraction were used to demonstrate the high quality of the LEO material. Deep level transient spectroscopy was also used to study the electrical properties of these materials. For LEO on sapphire, deep levels at 0.19, 0.30 and 0.45 eV below the conduction band were found, while for LEO on silicon, deep levels at 0.45 and 0.60 eV below the conduction were also found. The capture cross sections for these levels were 4.88e-18, 7.83e-17 and 1.5e-15 cm-2 for sapphire and 2.59e-14 and 1.35e-15 cm2 for silicon, respectively.",

author = "Manijeh Razeghi and P. Kung and Zhang, \{P. Sandvik X.\} and K. Mi and D. Walker and V. Kumar and J. Diaz",

year = "2000",

month = jan,

day = "1",

language = "English (US)",

volume = "3975",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices ; Conference date: 14-12-1999 Through 18-12-1999",

}

TY - JOUR

T1 - Future trends of III-nitrides using lateral epitaxial overgrowth

AU - Razeghi, Manijeh

AU - Kung, P.

AU - Zhang, P. Sandvik X.

AU - Mi, K.

AU - Walker, D.

AU - Kumar, V.

AU - Diaz, J.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - In this work, we present the low-pressure metalorganic chemical vapor deposition and characterization of the lateral epitaxial overgrowth (LEO) of GaN films on both sapphire and silicon substrates. The structural, optical and electrical properties are discussed. Scanning electron microscopy, atomic force microscopy and x-ray diffraction were used to demonstrate the high quality of the LEO material. Deep level transient spectroscopy was also used to study the electrical properties of these materials. For LEO on sapphire, deep levels at 0.19, 0.30 and 0.45 eV below the conduction band were found, while for LEO on silicon, deep levels at 0.45 and 0.60 eV below the conduction were also found. The capture cross sections for these levels were 4.88e-18, 7.83e-17 and 1.5e-15 cm-2 for sapphire and 2.59e-14 and 1.35e-15 cm2 for silicon, respectively.

AB - In this work, we present the low-pressure metalorganic chemical vapor deposition and characterization of the lateral epitaxial overgrowth (LEO) of GaN films on both sapphire and silicon substrates. The structural, optical and electrical properties are discussed. Scanning electron microscopy, atomic force microscopy and x-ray diffraction were used to demonstrate the high quality of the LEO material. Deep level transient spectroscopy was also used to study the electrical properties of these materials. For LEO on sapphire, deep levels at 0.19, 0.30 and 0.45 eV below the conduction band were found, while for LEO on silicon, deep levels at 0.45 and 0.60 eV below the conduction were also found. The capture cross sections for these levels were 4.88e-18, 7.83e-17 and 1.5e-15 cm-2 for sapphire and 2.59e-14 and 1.35e-15 cm2 for silicon, respectively.

UR - https://www.scopus.com/pages/publications/0033719137

UR - https://www.scopus.com/inward/citedby.url?scp=0033719137&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033719137

SN - 0277-786X

VL - 3975

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices

Y2 - 14 December 1999 through 18 December 1999

ER -

Future trends of III-nitrides using lateral epitaxial overgrowth

Abstract

ASJC Scopus subject areas

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