Ga0.51In0.49P/GaAs HEMT’s Exhibiting Good Electrical Performance at Cryogenic Temperatures

Yi Jen Chan, Dimitris Pavlidis, Manijeh Razeghi, Frank Omnes

Research output: Contribution to journalArticlepeer-review

80 Scopus citations

Abstract

The dc and microwave characteristics of Ga0.5l–In0.49P/GaAs HEMT’s grown by MOCVD are presented. Devices with 1 nm long gates show transconductance of 163 and 213 mS/mm at 300 and 77 K, respectively. Their maximum cutoff frequency is 17.8 GHz. Deep traps in the doped layer were evaluated at low temperature by the threshold voltage shift and current collapse phenomena. Galn-P/GaAs HEMT’s show no current collapse and have almost zero threshold voltage shift compared to AlGaAs/GaAs and InAlAs/InGaAs where the corresponding values are 0.5 and 0.25 V, respectively.

Original languageEnglish (US)
Pages (from-to)2141-2147
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume37
Issue number10
DOIs
StatePublished - Oct 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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