Starting from the growth of high-quality 1.3 μm GaInNAsGaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSbGaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSbGaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA cm2 with as-cleaved facet mirrors.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)