GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Z. C. Niu, S. Y. Zhang*, H. Q. Ni, Donghai Wu, H. Zhao, H. L. Peng, Y. Q. Xu, S. Y. Li, Z. H. He, Z. W. Ren, Q. Han, X. H. Yang, Y. Du, R. H. Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

111 Scopus citations

Abstract

Starting from the growth of high-quality 1.3 μm GaInNAsGaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSbGaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSbGaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA cm2 with as-cleaved facet mirrors.

Original languageEnglish (US)
Article number231121
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number23
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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