GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Z. C. Niu; S. Y. Zhang; H. Q. Ni; Donghai Wu; H. Zhao; H. L. Peng; Y. Q. Xu; S. Y. Li; Z. H. He; Z. W. Ren; Q. Han; X. H. Yang; Y. Du; R. H. Wu

doi:10.1063/1.2140614

GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Z. C. Niu, S. Y. Zhang^*, H. Q. Ni, Donghai Wu, H. Zhao, H. L. Peng, Y. Q. Xu, S. Y. Li, Z. H. He, Z. W. Ren, Q. Han, X. H. Yang, Y. Du, R. H. Wu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

115 Scopus citations

Abstract

Starting from the growth of high-quality 1.3 μm GaInNAsGaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSbGaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSbGaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA cm2 with as-cleaved facet mirrors.

Original language	English (US)
Article number	231121
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2140614
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Niu, Z. C., Zhang, S. Y., Ni, H. Q., Wu, D., Zhao, H., Peng, H. L., Xu, Y. Q., Li, S. Y., He, Z. H., Ren, Z. W., Han, Q., Yang, X. H., Du, Y., & Wu, R. H. (2005). GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy. Applied Physics Letters, 87(23), 1-3. Article 231121. https://doi.org/10.1063/1.2140614

@article{9ba2874ae87f4ae381d9ae37685b64c3,

title = "GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy",

abstract = "Starting from the growth of high-quality 1.3 μm GaInNAsGaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSbGaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSbGaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA cm2 with as-cleaved facet mirrors.",

author = "Niu, {Z. C.} and Zhang, {S. Y.} and Ni, {H. Q.} and Donghai Wu and H. Zhao and Peng, {H. L.} and Xu, {Y. Q.} and Li, {S. Y.} and He, {Z. H.} and Ren, {Z. W.} and Q. Han and Yang, {X. H.} and Y. Du and Wu, {R. H.}",

year = "2005",

doi = "10.1063/1.2140614",

language = "English (US)",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

number = "23",

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T1 - GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

AU - Niu, Z. C.

AU - Zhang, S. Y.

AU - Ni, H. Q.

AU - Wu, Donghai

AU - Zhao, H.

AU - Peng, H. L.

AU - Xu, Y. Q.

AU - Li, S. Y.

AU - He, Z. H.

AU - Ren, Z. W.

AU - Han, Q.

AU - Yang, X. H.

AU - Du, Y.

AU - Wu, R. H.

PY - 2005

Y1 - 2005

N2 - Starting from the growth of high-quality 1.3 μm GaInNAsGaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSbGaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSbGaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA cm2 with as-cleaved facet mirrors.

AB - Starting from the growth of high-quality 1.3 μm GaInNAsGaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSbGaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSbGaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA cm2 with as-cleaved facet mirrors.

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U2 - 10.1063/1.2140614

DO - 10.1063/1.2140614

M3 - Article

AN - SCOPUS:28444474778

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231121

ER -

GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

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