GaAs-GaInP multilayers for high performance electronic devices

F. Omnes*, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The optical, electrical and structural properties of GaAs-GaInP heterostructures, quantum wells and superlattices grown by low pressure chemical vapor deposition have been studied. Devices such as p-HEMTs, n-HEMTs, HIGFETs and HBTs have been fabricated and characterized.

Original languageEnglish (US)
Pages (from-to)571-583
Number of pages13
JournalRevue technique - Thomson-CSF
Volume23
Issue number3
StatePublished - Sep 1 1991

ASJC Scopus subject areas

  • Engineering(all)

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