The optical, electrical and structural properties of GaAs-GaInP heterostructures, quantum wells and superlattices grown by low pressure chemical vapor deposition have been studied. Devices such as p-HEMTs, n-HEMTs, HIGFETs and HBTs have been fabricated and characterized.
|Original language||English (US)|
|Number of pages||13|
|Journal||Revue technique - Thomson-CSF|
|State||Published - Sep 1 1991|
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