GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

Parsian K. Mohseni; Seung Hyun Kim; Xiang Zhao; Karthik Balasundaram; Jeong Dong Kim; Lei Pan; John A. Rogers; James J. Coleman; Xiuling Li

doi:10.1063/1.4817424

GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

Parsian K. Mohseni^*, Seung Hyun Kim, Xiang Zhao, Karthik Balasundaram, Jeong Dong Kim, Lei Pan, John A. Rogers, James J. Coleman, Xiuling Li

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization.

Original language	English (US)
Article number	064909
Journal	Journal of Applied Physics
Volume	114
Issue number	6
DOIs	https://doi.org/10.1063/1.4817424
State	Published - Aug 14 2013

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{40f17c375d914b319d21ebe12272b33a,

title = "GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching",

abstract = "We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization.",

author = "Mohseni, {Parsian K.} and {Hyun Kim}, Seung and Xiang Zhao and Karthik Balasundaram and {Dong Kim}, Jeong and Lei Pan and Rogers, {John A.} and Coleman, {James J.} and Xiuling Li",

year = "2013",

month = aug,

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doi = "10.1063/1.4817424",

language = "English (US)",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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number = "6",

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GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching. / Mohseni, Parsian K.; Hyun Kim, Seung; Zhao, Xiang; Balasundaram, Karthik; Dong Kim, Jeong; Pan, Lei; Rogers, John A.; Coleman, James J.; Li, Xiuling.

In: Journal of Applied Physics, Vol. 114, No. 6, 064909, 14.08.2013.

Research output: Contribution to journal › Article › peer-review

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T1 - GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

AU - Mohseni, Parsian K.

AU - Hyun Kim, Seung

AU - Zhao, Xiang

AU - Balasundaram, Karthik

AU - Dong Kim, Jeong

AU - Pan, Lei

AU - Rogers, John A.

AU - Coleman, James J.

AU - Li, Xiuling

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AB - We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization.

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