GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

Parsian K. Mohseni*, Seung Hyun Kim, Xiang Zhao, Karthik Balasundaram, Jeong Dong Kim, Lei Pan, John A. Rogers, James J. Coleman, Xiuling Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization.

Original languageEnglish (US)
Article number064909
JournalJournal of Applied Physics
Volume114
Issue number6
DOIs
StatePublished - Aug 14 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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