@article{40f17c375d914b319d21ebe12272b33a,
title = "GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching",
abstract = "We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization.",
author = "Mohseni, {Parsian K.} and {Hyun Kim}, Seung and Xiang Zhao and Karthik Balasundaram and {Dong Kim}, Jeong and Lei Pan and Rogers, {John A.} and Coleman, {James J.} and Xiuling Li",
note = "Funding Information: P.K.M thanks Dr. Edmond Chow for assistance with EL measurements. The authors gratefully acknowledge financial support provided by the DOE Division of Materials Science under Award No. DEFG02-337 07ER46471, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign, as well as the Center for Energy Nanoscience (CEN), an Energy Frontier Research Center (EFRC) funded by the U.S. Department of Energy, Office of Science and Office of Basic Energy Sciences, under Award No. DESC0001013.",
year = "2013",
month = aug,
day = "14",
doi = "10.1063/1.4817424",
language = "English (US)",
volume = "114",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",
}