Abstract
We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization.
| Original language | English (US) |
|---|---|
| Article number | 064909 |
| Journal | Journal of Applied Physics |
| Volume | 114 |
| Issue number | 6 |
| DOIs | |
| State | Published - Aug 14 2013 |
Funding
P.K.M thanks Dr. Edmond Chow for assistance with EL measurements. The authors gratefully acknowledge financial support provided by the DOE Division of Materials Science under Award No. DEFG02-337 07ER46471, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign, as well as the Center for Energy Nanoscience (CEN), an Energy Frontier Research Center (EFRC) funded by the U.S. Department of Energy, Office of Science and Office of Basic Energy Sciences, under Award No. DESC0001013.
ASJC Scopus subject areas
- General Physics and Astronomy