GaAs/AlxGa1-xAs Superlattice Waveguide Absorption Modulators with Very Low Drive Voltage

A. L. Moretti; D. J. Vezzetti; F. A. Chambers; K. A. Stair; G. P. Devane

doi:10.1109/68.141973

GaAs/AlxGa1-xAs Superlattice Waveguide Absorption Modulators with Very Low Drive Voltage

A. L. Moretti, D. J. Vezzetti, F. A. Chambers, K. A. Stair, G. P. Devane

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report the first GaAs/AlxGa1-xAs superlattice waveguide absorption modulators operating at ~ 860 nm which utilize the Wannier-Stark effect. The n =-1 Stark ladder peak is used, which is the transition from the valence band well to the nearest neighbor conduction band well. This peak shifts rapidly with applied electric field, resulting in drive voltages lower than can be achieved using the quantum-confined Stark effect for quantum-well waveguides of similar structure. For a 1000 μm, long waveguide at 867 nm, we obtain an extinction ratio of ∼ 20 dB and a 4 dB attenuation with a drive voltage of 2 V.

Original language	English (US)
Pages (from-to)	576-579
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/68.141973
State	Published - Jun 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "GaAs/AlxGa1-xAs Superlattice Waveguide Absorption Modulators with Very Low Drive Voltage",

abstract = "We report the first GaAs/AlxGa1-xAs superlattice waveguide absorption modulators operating at ~ 860 nm which utilize the Wannier-Stark effect. The n =-1 Stark ladder peak is used, which is the transition from the valence band well to the nearest neighbor conduction band well. This peak shifts rapidly with applied electric field, resulting in drive voltages lower than can be achieved using the quantum-confined Stark effect for quantum-well waveguides of similar structure. For a 1000 μm, long waveguide at 867 nm, we obtain an extinction ratio of ∼ 20 dB and a 4 dB attenuation with a drive voltage of 2 V.",

author = "Moretti, {A. L.} and Vezzetti, {D. J.} and Chambers, {F. A.} and Stair, {K. A.} and Devane, {G. P.}",

year = "1992",

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T1 - GaAs/AlxGa1-xAs Superlattice Waveguide Absorption Modulators with Very Low Drive Voltage

AU - Moretti, A. L.

AU - Vezzetti, D. J.

AU - Chambers, F. A.

AU - Stair, K. A.

AU - Devane, G. P.

PY - 1992/6

Y1 - 1992/6

N2 - We report the first GaAs/AlxGa1-xAs superlattice waveguide absorption modulators operating at ~ 860 nm which utilize the Wannier-Stark effect. The n =-1 Stark ladder peak is used, which is the transition from the valence band well to the nearest neighbor conduction band well. This peak shifts rapidly with applied electric field, resulting in drive voltages lower than can be achieved using the quantum-confined Stark effect for quantum-well waveguides of similar structure. For a 1000 μm, long waveguide at 867 nm, we obtain an extinction ratio of ∼ 20 dB and a 4 dB attenuation with a drive voltage of 2 V.

AB - We report the first GaAs/AlxGa1-xAs superlattice waveguide absorption modulators operating at ~ 860 nm which utilize the Wannier-Stark effect. The n =-1 Stark ladder peak is used, which is the transition from the valence band well to the nearest neighbor conduction band well. This peak shifts rapidly with applied electric field, resulting in drive voltages lower than can be achieved using the quantum-confined Stark effect for quantum-well waveguides of similar structure. For a 1000 μm, long waveguide at 867 nm, we obtain an extinction ratio of ∼ 20 dB and a 4 dB attenuation with a drive voltage of 2 V.

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GaAs/AlxGa1-xAs Superlattice Waveguide Absorption Modulators with Very Low Drive Voltage

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